Automated nanomanipulation for nanodevice construction.

Nanowire field-effect transistors (nano-FETs) are nanodevices capable of highly sensitive, label-free sensing of molecules. However, significant variations in sensitivity across devices can result from poor control over device parameters, such as nanowire diameter and the number of electrode-bridging nanowires. This paper presents a fabrication approach that uses wafer-scale nanowire contact printing for throughput and uses automated nanomanipulation for precision control of nanowire number and diameter. The process requires only one photolithography mask. Using nanowire contact printing and post-processing (i.e. nanomanipulation inside a scanning electron microscope), we are able to produce devices all with a single-nanowire and similar diameters at a speed of ~1 min/device with a success rate of 95% (n = 500). This technology represents a seamless integration of wafer-scale microfabrication and automated nanorobotic manipulation for producing nano-FET sensors with consistent response across devices.

Contact detection for nanomanipulation in a scanning electron microscope.

Nanomanipulation systems require accurate knowledge of the end-effector position in all three spatial coordinates, XYZ, for reliable manipulation of nanostructures. Although the images acquired by a scanning electron microscope (SEM) provide high resolution XY information, the lack of depth information in the Z-direction makes 3D nanomanipulation time-consuming. Existing approaches for contact detection of end-effectors inside SEM typically utilize fragile touch sensors that are difficult to integrate into a nanomanipulation system. This paper presents a method for determining the contact between an end-effector and a target surface during nanomanipulation inside SEM, purely based on the processing of SEM images. A depth-from-focus method is used in the fast approach of the end-effector to the substrate, followed by fine contact detection. Experimental results demonstrate that the contact detection approach is capable of achieving an accuracy of 21.5 nm at 50,000× magnification while inducing little end-effector damage.

Effect of nanowire number, diameter, and doping density on nano-FET biosensor sensitivity.

Semiconductive nanowire-based biosensors are capable of label-free detection of biological molecules. Nano-FET (field-effect transistor) biosensors exhibiting high sensitivities toward proteins, nucleic acids, and viruses have been demonstrated. Rational device design methodologies, particularly those based on theoretical predictions, were reported. However, few experimental studies have investigated the effect of nanowire diameter, doping density, and number on nano-FET sensitivity. In this study, we devised a fabrication process based on parallel approaches and nanomanipulation-based post-processing for constructing nano-FET biosensor devices with carefully controlled nanowire parameters (diameter, doping density, and number). We experimentally reveal the effect of these nanowire parameters on nano-FET biosensor sensitivity. The experimental findings quantitatively demonstrate that device sensitivity decreases with increasing number of nanowires (4 and 7 nanowire devices exhibited a ∼38 and ∼82% decrease in sensitivity as compared to a single-nanowire device), larger nanowire diameters (sensors with 81-100 and 101-120 nm nanowire diameters exhibited a ∼16 and ∼37% decrease in sensitivity compared to devices with nanowire diameters of 60-80 nm), and higher nanowire doping densities (∼69% decrease in sensitivity due to an increase in nanowire doping density from 10(17) to 10(19) atoms·cm(-3)). These results provide insight into the importance of controlling nanowire properties for maximizing sensitivity and minimizing performance variation across devices when designing and manufacturing nano-FET biosensors.