Silicon-nitride-based entrance slit design for the high-power-density monochromator in TPS 45A.

Details of the design and operational status of the silicon-nitride-based entrance slit installed in the Taiwan Photon Source (TPS) 45A beamline are given. The slit is a diamond blade edge etched onto a copper slit part, which is in thermal contact with the silicon nitride base. A stable slit opening smaller than 4 µm is achieved in TPS 45A. The beam size at the slit has a full width at half-maximum of 3 µm in the vertical direction with a power of 20 W. Additionally, a hard stop made of invar is incorporated to control the thermal expansion displacement. The slit reduces the size and increases the stability of the source of the monochromator. Consequently, a higher energy resolution and excellent beamline stability are achieved.

Bandgap Shrinkage and Charge Transfer in 2D Layered SnS2 Doped with V for Photocatalytic Efficiency Improvement.

Effects of electronic and atomic structures of V-doped 2D layered SnS2 are studied using X-ray spectroscopy for the development of photocatalytic/photovoltaic applications. Extended X-ray absorption fine structure measurements at V K-edge reveal the presence of VO and VS bonds which form the intercalation of tetrahedral OVS sites in the van der Waals (vdW) gap of SnS2 layers. X-ray absorption near-edge structure (XANES) reveals not only valence state of V dopant in SnS2 is ≈4+ but also the charge transfer (CT) from V to ligands, supported by V Lα,ß resonant inelastic X-ray scattering. These results suggest V doping produces extra interlayer covalent interactions and additional conducting channels, which increase the electronic conductivity and CT. This gives rapid transport of photo-excited electrons and effective carrier separation in layered SnS2 . Additionally, valence-band photoemission spectra and S K-edge XANES indicate that the density of states near/at valence-band maximum is shifted to lower binding energy in V-doped SnS2 compare to pristine SnS2 and exhibits band gap shrinkage. These findings support first-principles density functional theory calculations of the interstitially tetrahedral OVS site intercalated in the vdW gap, highlighting the CT from V to ligands in V-doped SnS2 .

Photonic-Crafting of Non-Volatile and Rewritable Antiferromagnetic Spin Textures with Drastic Difference in Electrical Conductivity.

Antiferromagnetic spintronics is an emerging field of non-volatile data storage and information processing. The zero net magnetization and zero stray fields of antiferromagnetic materials eliminate interference between neighbor units, leading to high-density memory integrations. However, this invisible magnetic character at the same time also poses a great challenge in controlling and detecting magnetic states in antiferromagnets. Here, two antiferromagnetic spin states close in energy in strained BiFeO3 thin films at room temperature are discovered. It can be reversibly switched between these two non-volatile antiferromagnetic states by a moderate magnetic field and a non-contact optical approach. Importantly, the conductivity of the areas with each antiferromagnetic textures is drastically different. It is conclusively demonstrated the capability of optical writing and electrical reading of these newly discovered bistable antiferromagnetic states in the BiFeO3 thin films.

Electronic structure, electron field emission and magnetic behaviors of carbon nanotubes fabricated on La0.66Sr0.33MnO3 (LSMO) for spintronics application.

This work elucidates the electronic structure, electron field emission and magnetic anisotropic behaviors of single wall carbon nanotubes (SWCNTs) for the spin-electronics device application grown on the La0.66Sr0.33MnO3 (LSMO)/SrTiO3 (STO) substrate. Micro-Raman spectroscopy, X-ray absorption near-edge structure (XANES) and valence-band photoemission spectroscopy (VBPES) were used for the study of electronics structure. The field emission characteristics were studied from the electron field emission current density (J) versus applied electric field (E(A)) from which the turn-on electric field (E(TOE)) was evaluated. The magnetization behaviors are also presented by the M-H hysteresis loop and were obtained by applying the magnetic field in the parallel and perpendicular direction of the CNTs at 305 K and 5 K temperatures. A magnetic measurement shows that the coercivity of the CNTs/LSMO/STO is higher and has hig anisotropic-nature than the composite LSMO/STO that could be the good material for the future possible spin-electronics device applications.

Role of Interfacial Defects in Photoelectrochemical Properties of BiVO4 Coated on ZnO Nanodendrites: X-ray Spectroscopic and Microscopic Investigation.

Synchrotron-based X-ray spectroscopic and microscopic techniques are used to identify the origin of enhancement of the photoelectrochemical (PEC) properties of BiVO4 (BVO) that is coated on ZnO nanodendrites (hereafter referred to as BVO/ZnO). The atomic and electronic structures of core-shell BVO/ZnO nanodendrites have been well-characterized, and the heterojunction has been determined to favor the migration of charge carriers under the PEC condition. The variation of charge density between ZnO and BVO in core-shell BVO/ZnO nanodendrites with many unpaired O 2p-derived states at the interface forms interfacial oxygen defects and yields a band gap of approximately 2.6 eV in BVO/ZnO nanocomposites. Atomic structural distortions at the interface of BVO/ZnO nanodendrites, which support the fact that there are many interfacial oxygen defects, affect the O 2p-V 3d hybridization and reduce the crystal field energy 10Dq ∼2.1 eV. Such an interfacial atomic/electronic structure and band gap modulation increase the efficiency of absorption of solar light and electron-hole separation. This study provides evidence that the interfacial oxygen defects act as a trapping center and are critical for the charge transfer, retarding electron-hole recombination, and high absorption of visible light, which can result in favorable PEC properties of a nanostructured core-shell BVO/ZnO heterojunction. Insights into the local atomic and electronic structures of the BVO/ZnO heterojunction support the fabrication of semiconductor heterojunctions with optimal compositions and an optimal interface, which are sought to maximize solar light utilization and the transportation of charge carriers for PEC water splitting and related applications.

Correlation among photoluminescence and the electronic and atomic structures of Sr2SiO4:xEu3+ phosphors: X-ray absorption and emission studies.

A series of Eu3+-activated strontium silicate phosphors, Sr2SiO4:xEu3+ (SSO:xEu3+, x = 1.0, 2.0 and 5.0%), were synthesized by a sol-gel method, and their crystalline structures, photoluminescence (PL) behaviors, electronic/atomic structures and bandgap properties were studied. The correlation among these characteristics was further established. X-ray powder diffraction analysis revealed the formation of mixed orthorhombic α'-SSO and monoclinic ß-SSO phases of the SSO:xEu3+ phosphors. When SSO:xEu3+ phosphors are excited under ultraviolet (UV) light (λ = 250 nm, ~ 4.96 eV), they emit yellow (~ 590 nm), orange (~ 613 nm) and red (~ 652 and 703 nm) PL bands. These PL emissions typically correspond to 4f-4f electronic transitions that involve the multiple excited 5D0 → 7FJ levels (J = 1, 2, 3 and 4) of Eu3+ activators in the host matrix. This mechanism of PL in the SSO:xEu3+ phosphors is strongly related to the local electronic/atomic structures of the Eu3+-O2- associations and the bandgap of the host lattice, as verified by Sr K-edge and Eu L3-edge X-ray absorption near-edge structure (XANES)/extended X-ray absorption fine structure, O K-edge XANES and Kα X-ray emission spectroscopy. In the synthesis of SSO:xEu3+ phosphors, interstitial Eu2O3-like structures are observed in the host matrix that act as donors, providing electrons that are nonradiatively transferred from the Eu 5d and/or O 2p-Eu 4f/5d states (mostly the O 2p-Eu 5d states) to the 5D0 levels, facilitating the recombination of electrons that have transitioned from the 5D0 level to the 7FJ level in the bandgap. This mechanism is primarily responsible for the enhancement of PL emissions in the SSO:xEu3+ phosphors. This PL-related behavior indicates that SSO:xEu3+ phosphors are good light-conversion phosphor candidates for use in near-UV chips and can be very effective in UV-based light-emitting diodes.

High-temperature annealing effects on multiwalled carbon nanotubes: electronic structure, field emission and magnetic behaviors.

This work elucidates the effects of high-temperature annealing on the microscopic and electronic structure of multiwalled carbon nanotubes (MWCNTs) using high-resolution transmission electron microscopy, micro-Raman spectroscopy, X-ray diffraction, X-ray absorption near-edge structure (XANES) and valence-band photoemission spectroscopy (VBPES), respectively. The field emission and magnetization behaviors are also presented. The results of annealing are as follows: (1) MWCNTs tend to align in the form of small fringes along their length, promote graphitization and be stable in air, (2) XANES indicates an enhancement in oxygen content on the sample, implying that it can be adopted for sensing and storing oxygen gas, (3) the electron field emission current density (J) is enhanced and the turn-on electric field (E(TOE)) reduced, suggesting potential use in field emission displays and as electron sources in microwave tube amplifiers and (4) as-grown MWCNTs with embedded iron nanoparticles exhibits significantly higher coercivity approximately 750 Oe than its bulk counterpart (Fe(bulk) approximately 0.9 Oe), suggesting its potential use as low-dimensional high-density magnetic recording media.

Development of a long trace profiler in situ at National Synchrotron Radiation Research Center.

To achieve an ultrahigh resolution of a beamline for soft X-rays at the Taiwan Photon Source (TPS), the profile of a highly precise grating is required at various curvatures. The slope error could be decreased to 0.1 µrad (rms) at a thermal load with a specially designed bender having 25 actuators. In the meantime, a long-trace profiler (LTP) was developed in situ to monitor the grating profile under a thermal load; it consists of a moving optical head, an air-bearing slide, an adjustable stand, and a glass viewport on the vacuum chamber. In the design of this system, a test chamber with an interior mirror was designed to simulate the chamber in the beamline. To prevent an error induced from a commercial viewport, a precision glass viewport (150CF, flatness 1/150 λ rms at 632.8 nm) was designed. The error induced from the slope error of the glass surface and the vacuum deformation was also simulated. The performance of the optical head of the LTP in situ (ISLTP) has been tested in the metrology laboratory. The sources of error of this LTP including the linearity and the glass viewport were corrected after the measurement. For the beamline measurement, an optical head was mounted outside the vacuum chamber; the measuring beam passed through the glass viewport to measure the grating profile in vacuum. The measurement of the LTP after correction of the above errors yielded a precision about 0.2 µrad (rms). In a preliminary test, an ISLTP was used to measure the grating profile at soft X-ray beamline TPS45A. The measured profile was for the bending mechanism to optimize the slope profile. From the measured energy spectrum, the slope error of the grating was estimated with software for optical simulation to be about 0.3 µrad (rms), consistent with our estimate of the ISLTP. In the future, it will be used to monitor the thermal bump under a large thermal load. In addition, an ISLTP was used to monitor the properties of optical elements-the twist and radius in the beamline during the installation phase.

Chemical Modification of Graphene Oxide by Nitrogenation: An X-ray Absorption and Emission Spectroscopy Study.

Nitrogen-doped graphene oxides (GO:Nx) were synthesized by a partial reduction of graphene oxide (GO) using urea [CO(NH2)2]. Their electronic/bonding structures were investigated using X-ray absorption near-edge structure (XANES), valence-band photoemission spectroscopy (VB-PES), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS). During GO:Nx synthesis, different nitrogen-bonding species, such as pyrrolic/graphitic-nitrogen, were formed by replacing of oxygen-containing functional groups. At lower N-content (2.7 at%), pyrrolic-N, owing to surface and subsurface diffusion of C, N and NH is deduced from various X-ray spectroscopies. In contrast, at higher N-content (5.0 at%) graphitic nitrogen was formed in which each N-atom trigonally bonds to three distinct sp2-hybridized carbons with substitution of the N-atoms for C atoms in the graphite layer. Upon nitrogen substitution, the total density of state close to Fermi level is increased to raise the valence-band maximum, as revealed by VB-PES spectra, indicating an electron donation from nitrogen, molecular bonding C/N/O coordination or/and lattice structure reorganization in GO:Nx. The well-ordered chemical environments induced by nitrogen dopant are revealed by XANES and RIXS measurements.

Atomistic nucleation sites of Pt nanoparticles on N-doped carbon nanotubes.

The atomistic nucleation sites of Pt nanoparticles (Pt NPs) on N-doped carbon nanotubes (N-CNTs) were investigated using C and N K-edge and Pt L3-edge X-ray absorption near-edge structure (XANES)/extended X-ray absorption fine structure (EXAFS) spectroscopy. Transmission electron microscopy and XANES/EXAFS results revealed that the self-organized Pt NPs on N-CNTs are uniformly distributed because of the relatively high binding energies of the adsorbed Pt atoms at the imperfect sites. During the atomistic nucleation process of Pt NPs on N-CNTs, stable Pt-C and Pt-N bonds are presumably formed, and charge transfer occurs at the surface/interface of the N-CNTs. The findings in this study were consistent with density functional theory calculations performed using cluster models for the undoped, substitutional-N-doped and pyridine-like-N-doped CNTs.