Candida auris: A pathogen difficult to identify, treat, and eradicate and its characteristics in Japanese strains.

Candida auris is a multidrug-resistant and emergent pathogen that has caused healthcare-associated infection outbreaks. Recently, C. auris has spread worldwide; nevertheless, it was unexpectedly rare before 2009. Based on the molecular epidemiological analysis, C. auris may independently emerge at specific areas at first and recently may be transmitted to other continents. As C. auris cannot be detected using conventional methods, internally transcribed spacers, D1/D2 regions of the 26S rDNA sequencing, and/or matrix-assisted laser desorption ionization time-of-flight mass spectrometry method can be selected as comparatively accessible choices. Thus, detection of C. auris using the conventional method might be underestimated. In Japan, all C. auris strains were isolated from ear specimen and not from invasive mycoses. Japan strains were classified as an East Asian clade under a single clone. Although colonization, virulence, and infection pattern are almost the same as with other Candida species, its antifungal resistance is different. Fluconazole resistance is notably common, but resistance to all three classes of antifungals (azole, polyene, and echinocandin) rarely exists. Once C. auris is detected, screening, emphasis on hand hygiene adherence, use of single-patient room isolation, contact precaution, surveillance, and eradication from the environment and patients are appropriately required for infection control.

Homozygous deletions on the short arm of chromosome 3 in human oral squamous cell carcinomas.

Recent cytogenetic and allelic deletion analyses have demonstrated that deletions on the short arm of chromosome 3 (3p) are frequently found in various cancers, including oral squamous cell carcinomas (OSCCs). This suggests that one or more tumor suppressor gene(s) for these malignancies might be located on 3p. In the present study, to further define the region(s) on 3p that harbor putative tumor suppressor gene(s) for OSCCs, we have investigated the existence of homozygous deletions (HDs) at 34 loci on 3p, in 14 OSCC cell lines. HDs were detected within the FRA3B region at 3p14.2 in only two cell lines (HSC-4 and TSU). Recently, the human fragile histidine triad (FHIT) gene was isolated from this region, abnormalities of which have been found at high frequencies in several types of human cancers. We also examined the expression of the FHIT gene, using reverse transcription-polymerase chain reaction (RT-PCR) and exon-specific PCR, in the two OSCC cell lines which showed HDs at 3p14.2. There was no detectable expression of exon 5, which was the first protein-coding exon of FHIT gene, in HSC-4 cells, indicating that this region was homozygously deleted in this cell line. On the other hand, HD in the TSU cells did not affect the coding region of the FHIT gene, and the wild-type transcript was detected by RT-PCR. Therefore, several candidate tumor suppressor genes, including the FHIT gene, may reside in these homozygously deleted regions. To our knowledge, this is the first report of HDs on 3p in OSCCs.

Coherent multiple charge transfer in a superconducting NbN tunnel junction.

We measured shot noise and submillimeter-wave response in a superconducting NbN tunnel junction that had a subharmonic gap structure on the current-voltage (I-V) curve. We found that the observed effective charge, defined from the noise-current ratio, tends to a steplike function of voltage. In the presence of submillimeter-wave radiation of frequency v, novel step structures spaced by hv/2e below and above the half-gap voltage clearly appeared on the I-V curve, overlapping the ordinary photon-assisted tunneling steps spaced by hv/e. Observation of these features provides clear evidence that coherent multiple Andreev reflection processes occur in the NbN tunnel junction with low barrier transparency.

Monolithic formation of thin films on the vertical surface of a substrate by a dual-ion-beam sputtering technique.

We have developed a novel method for the selective deposition of thin films on the vertical surface of a planar substrate with a vertical step. This was done with a dual-ion-beam sputtering apparatus that is equipped with two ion-beam sources. Using this technique a multilayer filter was monolithically formed on the vertical surface of a Si substrate on which a photodetector had been fabricated, and clear filtering-photodetecting characteristics were observed. This technique can be applied to the monolithic integration of thin-film devices and waveguide-type optical devices with a vertical end facet.