Engineering 2D Material Exciton Line Shape with Graphene/h-BN Encapsulation.

Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton line shape and charge state. Fano-like asymmetric spectral features are produced in WS2, MoSe2, and WSe2 van der Waals heterostructures combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe2/graphene with a neutral exciton red shift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward shaping the spectral profile of narrow optical modes for application in nanophotonic devices.

Mapping Modified Electronic Levels in the Moiré Patterns in MoS2/WSe2 Using Low-Loss EELS.

Hybrid/moiré interlayer and intralayer excitons have been realized in twisted two-dimensional transition metal chalcogenides (2D-TMD) due to variation in local moiré potential within a moiré supercell. Though moiré excitons have been detected in TMD heterostructures by macroscopic spectroscopic techniques, their spatial distribution is experimentally unknown. In the present work, using high-resolution scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS), we explore the effect of the twist angle in MoS2/WSe2 heterostructures. We observe weak interaction between the layers at higher twist angles (>5°) and stronger interaction for lower twist angles. The optical response of the heterostructure varies within the moiré supercell, with a lower energy absorption peak appearing in regions with the AA stacking.

Nanoscale Modification of WS2 Trion Emission by Its Local Electromagnetic Environment.

Structural, electronic, and chemical nanoscale modifications of transition metal dichalcogenide monolayers alter their optical properties. A key missing element for complete control is a direct spatial correlation of optical response to nanoscale modifications due to the large gap in spatial resolution between optical spectroscopy and nanometer-resolved techniques. Here, we bridge this gap by obtaining nanometer-resolved optical properties using electron spectroscopy at cryogenic temperatures, specifically electron energy loss spectroscopy for absorption and cathodoluminescence for emission, which are then directly correlated to chemical and structural information. In an h-BN/WS2/h-BN heterostructure, we observe local modulation of the trion (X-) emission due to tens of nanometer wide dielectric patches. Trion emission also increases in regions where charge accumulation occurs, close to the carbon film supporting the heterostructures. The localized exciton emission (L) detected here is not correlated to strain above 1%, suggesting point defects might be involved in their formation.

Nanoscale Relative Emission Efficiency Mapping Using Cathodoluminescence g(2) Imaging.

Cathodoluminescence (CL) imaging spectroscopy provides two-dimensional optical excitation images of photonic nanostructures with a deep-subwavelength spatial resolution. So far, CL imaging was unable to provide a direct measurement of the excitation and emission probabilities of photonic nanostructures in a spatially resolved manner. Here, we demonstrate that by mapping the cathodoluminescence autocorrelation function g(2) together with the CL spectral distribution the excitation and emission rates can be disentangled at every excitation position. We use InGaN/GaN quantum wells in GaN nanowires with diameters in the range 200-500 nm as a model system to test our new g(2) mapping methodology and find characteristic differences in excitation and emission rates both between wires and within wires. Strong differences in the average CL intensity between the wires are the result of differences in the emission efficiencies. At the highest spatial resolution, intensity variations observed within wires are the result of excitation rates that vary with the nanoscale geometry of the structures. The fact that strong spatial variations observed in the CL intensity are not only uniquely linked to variations in emission efficiency but also linked to excitation efficiency has profound implications for the interpretation of the CL data for nanostructured geometries in general.

AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics.

Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet (DUV) light sources. Devices operating in the near-UV spectral range have been realized; to date, however, the achievement of high-efficiency light-emitting diodes (LEDs) operating in the UV-C band (200-280 nm specifically) has been hindered by the extremely inefficient p-type conduction in AlGaN and the lack of DUV-transparent conductive electrodes. Here, we show that these critical challenges can be addressed by Mg dopant-free Al(Ga)N/h-BN nanowire heterostructures. By exploiting the acceptor-like boron vacancy formation, we have demonstrated that h-BN can function as a highly conductive, DUV-transparent electrode; the hole concentration is ∼1020 cm-3 at room temperature, which is 10 orders of magnitude higher than that previously measured for Mg-doped AlN epilayers. We have further demonstrated the first Al(Ga)N/h-BN LED, which exhibits strong emission at ∼210 nm. This work also reports the first achievement of Mg-free III-nitride LEDs that can exhibit high electrical efficiency (80% at 20 A/cm2).

Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics.

Semiconductor light sources operating in the ultraviolet (UV)-C band (100-280 nm) are in demand for a broad range of applications but suffer from extremely low efficiency. AlGaN nanowire photonic crystals promise to break the efficiency bottleneck of deep UV photonics. We report, for the first time, site-controlled epitaxy of AlGaN nanowire arrays with Al incorporation controllably varied across nearly the entire compositional range. It is also observed that an Al-rich AlGaN shell structure is spontaneously formed, significantly suppressing nonradiative surface recombination. An internal quantum efficiency up to 45% was measured at room-temperature. We have further demonstrated large area AlGaN nanowire LEDs operating in the UV-C band on sapphire substrate, which exhibit excellent optical and electrical performance, including a small turn-on voltage of ~4.4 V and an output power of ~0.93 W/cm2 at a current density of 252 A/cm2. The controlled synthesis of AlGaN subwavelength nanostructures with well-defined size, spacing, and spatial arrangement and tunable emission opens up new opportunities for developing high efficiency LEDs and lasers and promises to break the efficiency bottleneck of deep UV photonics.

Full-Color Single Nanowire Pixels for Projection Displays.

Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated on the same substrate using selective area epitaxy. It is observed that the structural and optical properties of InGaN/GaN quantum dots depend critically on nanowire diameters. Photoluminescence emission of single InGaN/GaN dot-in-nanowire structures exhibits a consistent blueshift with increasing nanowire diameter. This is explained by the significantly enhanced indium (In) incorporation for nanowires with small diameters, due to the more dominant contribution for In incorporation from the lateral diffusion of In adatoms. Single InGaN/GaN nanowire LEDs with emission wavelengths across nearly the entire visible spectral were demonstrated on a single chip by varying the nanowire diameters. Such nanowire LEDs also exhibit superior electrical performance, with a turn-on voltage ∼2 V and negligible leakage current under reverse bias. The monolithic integration of full-color LEDs on a single chip, coupled with the capacity to tune light emission characteristics at the single nanowire level, provides an unprecedented approach to realize ultrasmall and efficient projection display, smart lighting, and on-chip spectrometer.

Atomic Ordering in InGaN Alloys within Nanowire Heterostructures.

Ternary III-nitride based nanowires (NWs) are promising for optoelectronic applications by offering advantageous design and control over composition, structure, and strain. Atomic-level chemical ordering in wurtzite InGaN alloys along the c-plane direction with a 1:1 periodicity within InGaN/GaN NW heterostructures was investigated by scanning transmission electron microscopy. Atomic-number-sensitive imaging contrast was used to simultaneously assign the In-rich and Ga-rich planes and determine the crystal polarity to differentiate unique sublattice sites. The nonrandom occupation of the c-planes in the InGaN alloys is confirmed by the occurrence of additional superlattice spots in the diffraction pattern within the ternary alloy. Compositional modulations in the ordered InGaN was further studied using atomic-resolution elemental mapping, outlining the substantial In-enrichment. Confirming the preferential site occupation of In-atoms provides experimental validation for the previous theoretical model of ordered InGaN alloys in bulk epilayers based on differences in surface site energy. Therefore, this study strongly suggests that atomic ordering in InGaN has a surface energetics-induced origin. Optimization of atomic ordering, in particular in III-nitride NW heterostructures, could be an alternative design tool toward desirable structural and compositional properties for various device applications operating at longer visible wavelengths.

High efficiency solar-to-hydrogen conversion on a monolithically integrated InGaN/GaN/Si adaptive tunnel junction photocathode.

H2 generation under sunlight offers great potential for a sustainable fuel production system. To achieve high efficiency solar-to-hydrogen conversion, multijunction photoelectrodes have been commonly employed to absorb a large portion of the solar spectrum and to provide energetic charge carriers for water splitting. However, the design and performance of such tandem devices has been fundamentally limited by the current matching between various absorbing layers. Here, by exploiting the lateral carrier extraction scheme of one-dimensional nanowire structures, we have demonstrated that a dual absorber photocathode, consisting of p-InGaN/tunnel junction/n-GaN nanowire arrays and a Si solar cell wafer, can operate efficiently without the strict current matching requirement. The monolithically integrated photocathode exhibits an applied bias photon-to-current efficiency of 8.7% at a potential of 0.33 V versus normal hydrogen electrode and nearly unity Faradaic efficiency for H2 generation. Such an adaptive multijunction architecture can surpass the design and performance restrictions of conventional tandem photoelectrodes.

Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy.

The interplay between strain and composition is at the basis of heterostructure design to engineer new properties. The influence of the strain distribution on the incorporation of indium during the formation of multiple InGaN/GaN quantum dots (QDs) in nanowire (NW) heterostructures has been investigated, using the combined techniques of geometric phase analysis of atomic-resolution images and quantitative elemental mapping from core-loss electron energy-loss spectroscopy within scanning transmission electron microscopy. The variation in In-content between successive QDs within individual NWs shows a dependence on the magnitude of compressive strain along the growth direction within the underlying GaN barrier layer, which affects the incorporation of In-atoms to minimize the local effective strain energy. Observations suggest that the interfacial misfit between InGaN/GaN within the embedded QDs is mitigated by strain partitioning into both materials, and results in normal stresses inflicted by the presence of the surrounding GaN shell. These experimental measurements are linked to the local piezoelectric polarization fields for individual QDs, and are discussed in terms of the photoluminescence from an ensemble of NWs.

Cathodoluminescence excitation spectroscopy: Nanoscale imaging of excitation pathways.

Following optical excitations' life span from creation to decay into photons is crucial in understanding materials photophysics. Macroscopically, this is studied using optical techniques, such as photoluminescence excitation spectroscopy. However, excitation and emission pathways can vary at nanometer scales, preventing direct access, as no characterization technique has the relevant spatial, spectral, and time resolution. Here, using combined electron spectroscopies, we explore excitations' creation and decay in two representative optical materials: plasmonic nanoparticles and luminescent two-dimensional layers. The analysis of the energy lost by an exciting electron that is coincident in time with a visible-ultraviolet photon unveils the decay pathways from excitation toward light emission. This is demonstrated for phase-locked (coherent) interactions (localized surface plasmons) and non-phase-locked ones (point defect excited states). The developed cathodoluminescence excitation spectroscopy images energy transfer pathways at the nanometer scale, widening the available toolset to explore nanoscale materials.

Spatiotemporal imaging of 2D polariton wave packet dynamics using free electrons.

Coherent optical excitations in two-dimensional (2D) materials, 2D polaritons, can generate a plethora of optical phenomena that arise from the extraordinary dispersion relations that do not exist in regular materials. Probing of the dynamical phenomena of 2D polaritons requires simultaneous spatial and temporal imaging capabilities and could reveal unknown coherent optical phenomena in 2D materials. Here, we present a spatiotemporal measurement of 2D wave packet dynamics, from its formation to its decay, using an ultrafast transmission electron microscope driven by femtosecond midinfrared pulses. The ability to coherently excite phonon-polariton wave packets and probe their evolution in a nondestructive manner reveals intriguing dispersion-dependent dynamics that includes splitting of multibranch wave packets and, unexpectedly, wave packet deceleration and acceleration. Having access to the full spatiotemporal dynamics of 2D wave packets can be used to illuminate puzzles in topological polaritons and discover exotic nonlinear optical phenomena in 2D materials.

Spatial and spectral dynamics in STEM hyperspectral imaging using random scan patterns.

The evolution of the scanning modules for scanning transmission electron microscopes (STEM) allows now to generate arbitrary scan pathways, an approach currently explored to improve acquisition speed and to reduce electron dose effects. In this work, we present the implementation of a random scan operating mode in STEM achieved at the hardware level via a custom scan control module. A pre-defined pattern with fully shuffled raster order is used to sample the entire region of interest. Subsampled random sparse images can then be extracted at successive time frames, to which suitable image reconstruction techniques can be applied. With respect to the conventional raster scan mode, this method permits to limit dose accumulation effects, but also to decouple the spatial and temporal information in hyperspectral images. We provide some proofs of concept of the flexibility of the random scan operating mode, presenting examples of its applications in different spectro-microscopy contexts: atomically-resolved elemental maps with electron energy loss spectroscopy and nanoscale-cathodoluminescence spectrum images. By employing adapted post-processing tools, it is demonstrated that the method allows to precisely track and correct for sample instabilities and to follow spectral diffusion with a high spatial resolution.

Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications.

Nearly dislocation-free semipolar AlGaN templates are achieved on c-plane sapphire substrate through controlled nanowire coalescence by selective-area epitaxy. The coalesced Mg-doped AlGaN layers exhibit superior charge-carrier-transport properties. Semipolar-AlGaN ultraviolet light-emitting diodes demonstrate excellent performance. This work establishes the use of engineered nanowire structures as a viable architecture to achieve large-area, dislocation-free planar photonic and electronic devices.

Engineering the carrier dynamics of InGaN nanowire white light-emitting diodes by distributed p-AlGaN electron blocking layers.

We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ~0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ~95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs.