Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal.

Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride1-4-including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds-but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry5-23. However, the preparation of large-sized single-crystal rBN layers remains a challenge24-26, owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron-nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials.

Seeded growth of large single-crystal copper foils with high-index facets.

The production of large single-crystal metal foils with various facet indices has long been a pursuit in materials science owing to their potential applications in crystal epitaxy, catalysis, electronics and thermal engineering1-5. For a given metal, there are only three sets of low-index facets ({100}, {110} and {111}). In comparison, high-index facets are in principle infinite and could afford richer surface structures and properties. However, the controlled preparation of single-crystal foils with high-index facets is challenging, because they are neither thermodynamically6,7 nor kinetically3 favourable compared to low-index facets6-18. Here we report a seeded growth technique for building a library of single-crystal copper foils with sizes of about 30 × 20 square centimetres and more than 30 kinds of facet. A mild pre-oxidation of polycrystalline copper foils, followed by annealing in a reducing atmosphere, leads to the growth of high-index copper facets that cover almost the entire foil and have the potential of growing to lengths of several metres. The creation of oxide surface layers on our foils means that surface energy minimization is not a key determinant of facet selection for growth, as is usually the case. Instead, facet selection is dictated randomly by the facet of the largest grain (irrespective of its surface energy), which consumes smaller grains and eliminates grain boundaries. Our high-index foils can be used as seeds for the growth of other Cu foils along either the in-plane or the out-of-plane direction. We show that this technique is also applicable to the growth of high-index single-crystal nickel foils, and we explore the possibility of using our high-index copper foils as substrates for the epitaxial growth of two-dimensional materials. Other applications are expected in selective catalysis, low-impedance electrical conduction and heat dissipation.

Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper.

The development of two-dimensional (2D) materials has opened up possibilities for their application in electronics, optoelectronics and photovoltaics, because they can provide devices with smaller size, higher speed and additional functionalities compared with conventional silicon-based devices1. The ability to grow large, high-quality single crystals for 2D components-that is, conductors, semiconductors and insulators-is essential for the industrial application of 2D devices2-4. Atom-layered hexagonal boron nitride (hBN), with its excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator5-12. However, the size of 2D hBN single crystals is typically limited to less than one millimetre13-18, mainly because of difficulties in the growth of such crystals; these include excessive nucleation, which precludes growth from a single nucleus to large single crystals, and the threefold symmetry of the hBN lattice, which leads to antiparallel domains and twin boundaries on most substrates19. Here we report the epitaxial growth of a 100-square-centimetre single-crystal hBN monolayer on a low-symmetry Cu (110) vicinal surface, obtained by annealing an industrial copper foil. Structural characterizations and theoretical calculations indicate that epitaxial growth was achieved by the coupling of Cu <211> step edges with hBN zigzag edges, which breaks the equivalence of antiparallel hBN domains, enabling unidirectional domain alignment better than 99 per cent. The growth kinetics, unidirectional alignment and seamless stitching of the hBN domains are unambiguously demonstrated using centimetre- to atomic-scale characterization techniques. Our findings are expected to facilitate the wide application of 2D devices and lead to the epitaxial growth of broad non-centrosymmetric 2D materials, such as various transition-metal dichalcogenides20-23, to produce large single crystals.

Designed growth of large bilayer graphene with arbitrary twist angles.

The production of large-area twisted bilayer graphene (TBG) with controllable angles is a prerequisite for proceeding with its massive applications. However, most of the prevailing strategies to fabricate twisted bilayers face great challenges, where the transfer methods are easily stuck by interfacial contamination, and direct growth methods lack the flexibility in twist-angle design. Here we develop an effective strategy to grow centimetre-scale TBG with arbitrary twist angles (accuracy, <1.0°). The success in accurate angle control is realized by an angle replication from two prerotated single-crystal Cu(111) foils to form a Cu/TBG/Cu sandwich structure, from which the TBG can be isolated by a custom-developed equipotential surface etching process. The accuracy and consistency of the twist angles are unambiguously illustrated by comprehensive characterization techniques, namely, optical spectroscopy, electron microscopy, photoemission spectroscopy and photocurrent spectroscopy. Our work opens an accessible avenue for the designed growth of large-scale two-dimensional twisted bilayers and thus lays the material foundation for the future applications of twistronics at the integration level.

Stacking-Controlled Growth of rBN Crystalline Films with High Nonlinear Optical Conversion Efficiency up to 1.

Nonlinear optical crystals lie at the core of ultrafast laser science and quantum communication technology. The emergence of 2D materials provides a revolutionary potential for nonlinear optical crystals due to their exceptionally high nonlinear coefficients. However, uncontrolled stacking orders generally induce the destructive nonlinear response due to the optical phase deviation in different 2D layers. Therefore, conversion efficiency of 2D nonlinear crystals is typically limited to less than 0.01% (far below the practical criterion of >1%). Here, crystalline films of rhombohedral boron nitride (rBN) with parallel stacked layers are controllably synthesized. This success is realized by the utilization of vicinal FeNi (111) single crystal, where both the unidirectional arrangement of BN grains into a single-crystal monolayer and the continuous precipitation of (B,N) source for thick layers are guaranteed. The preserved in-plane inversion asymmetry in rBN films keeps the in-phase second-harmonic generation field in every layer and leads to a record-high conversion efficiency of 1% in the whole family of 2D materials within the coherence thickness of only 1.6 µm. The work provides a route for designing ultrathin nonlinear optical crystals from 2D materials, and will promote the on-demand fabrication of integrated photonic and compact quantum optical devices.

Strong chiroptical nonlinearity in coherently stacked boron nitride nanotubes.

Nanomaterials with a large chiroptical response and high structural stability are desirable for advanced miniaturized optical and optoelectronic applications. One-dimensional (1D) nanotubes are robust crystals with inherent and continuously tunable chiral geometries. However, their chiroptical response is typically weak and hard to control, due to the diverse structures of the coaxial tubes. Here we demonstrate that as-grown multiwalled boron nitride nanotubes (BNNTs), featuring coherent-stacking structures including near monochirality, homo-handedness and unipolarity among the component tubes, exhibit a scalable nonlinear chiroptical response. This intrinsic architecture produces a strong nonlinear optical response in individual multiwalled BNNTs, enabling second-harmonic generation (SHG) with a conversion efficiency up to 0.01% and output power at the microwatt level-both excellent figures of merit in the 1D nanomaterials family. We further show that the rich chirality of the nanotubes introduces a controllable nonlinear geometric phase, producing a chirality-dependent SHG circular dichroism with values of -0.7 to +0.7. We envision that our 1D chiral platform will enable novel functions in compact nonlinear light sources and modulators.

Probing structural superlubricity of two-dimensional water transport with atomic resolution.

Low-dimensional water transport can be drastically enhanced under atomic-scale confinement. However, its microscopic origin is still under debate. In this work, we directly imaged the atomic structure and transport of two-dimensional water islands on graphene and hexagonal boron nitride surfaces using qPlus-based atomic force microscopy. The lattice of the water island was incommensurate with the graphene surface but commensurate with the boron nitride surface owing to different surface electrostatics. The area-normalized static friction on the graphene diminished as the island area was increased by a power of ~-0.58, suggesting superlubricity behavior. By contrast, the friction on the boron nitride appeared insensitive to the area. Molecular dynamic simulations further showed that the friction coefficient of the water islands on the graphene could reduce to <0.01.

Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals.

Rhombohedral-stacked transition-metal dichalcogenides (3R-TMDs), which are distinct from their hexagonal counterparts, exhibit higher carrier mobility, sliding ferroelectricity, and coherently enhanced nonlinear optical responses. However, surface epitaxial growth of large multilayer 3R-TMD single crystals is difficult. We report an interfacial epitaxy methodology for their growth of several compositions, including molybdenum disulfide (MoS2), molybdenum diselenide, tungsten disulfide, tungsten diselenide, niobium disulfide, niobium diselenide, and molybdenum sulfoselenide. Feeding of metals and chalcogens continuously to the interface between a single-crystal Ni substrate and grown layers ensured consistent 3R stacking sequence and controlled thickness from a few to 15,000 layers. Comprehensive characterizations confirmed the large-scale uniformity, high crystallinity, and phase purity of these films. The as-grown 3R-MoS2 exhibited room-temperature mobilities up to 155 and 190 square centimeters per volt second for bi- and trilayers, respectively. Optical difference frequency generation with thick 3R-MoS2 showed markedly enhanced nonlinear response under a quasi-phase matching condition (five orders of magnitude greater than monolayers).

WS2 ribbon arrays with defined chirality and coherent polarity.

One-dimensional transition metal dichalcogenides exhibiting an enhanced bulk photovoltaic effect have the potential to exceed the Shockley-Queisser limit efficiency in solar energy harvest within p-n junction architectures. However, the collective output of these prototype devices remains a challenge. We report on the synthesis of single-crystalline WS2 ribbon arrays with defined chirality and coherent polarity through an atomic manufacturing strategy. The chirality of WS2 ribbon was defined by substrate couplings into tunable armchair, zigzag, and chiral species, and the polarity direction was determined by the ribbon-precursor interfacial energy along a coherent direction. A single armchair ribbon showed strong bulk photovoltaic effect and the further integration of ~1000 aligned ribbons with coherent polarity enabled upscaling of the photocurrent.

Fabrication of Cu/Al/Cu Laminated Composites Reinforced with Graphene by Hot Pressing and Evaluation of Their Electrical Conductivity.

Metal laminated composites are widely used in industrial and commercial applications due to their excellent overall performance. In this study, the copper/graphene-aluminum-copper/graphene (Cu/Gr-Al-Cu/Gr) laminated composites were prepared by ingenious hot pressing design. Raman, optical microscope (OM), scanning electron microscope (SEM), van der Pauw (vdP), and X-Ray Diffractometer (XRD) were used to investigate the graphene status, interface bonding, diffusion layer thickness, electrical conductivity, Miller indices and secondary phases, respectively. The results demonstrate that the Cu-Al interfaces in the Cu/Gr-Al-Cu/Gr composites were free of pores, cracks and other defects and bonded well. The number of graphene layers was varied by regulating the thickness of the Cu/Gr layer, with the Cu/Gr foils fabricated by chemical vapor deposition (CVD). The electrical conductivity of the composite was significantly improved by the induced high-quality interfaces Cu/Gr structure. The increased number of graphene layers is beneficial for enhancing the electrical conductivity of the Cu/Gr-Al-Cu/Gr composite, and the highest conductivity improved by 20.5% compared to that of raw Al.

Enhanced copper anticorrosion from Janus-doped bilayer graphene.

The atomic-thick anticorrosion coating for copper (Cu) electrodes is essential for the miniaturisation in the semiconductor industry. Graphene has long been expected to be the ultimate anticorrosion material, however, its real anticorrosion performance is still under great controversy. Specifically, strong electronic couplings can limit the interfacial diffusion of corrosive molecules, whereas they can also promote the surficial galvanic corrosion. Here, we report the enhanced anticorrosion for Cu simply via a bilayer graphene coating, which provides protection for more than 5 years at room temperature and 1000 h at 200 °C. Such excellent anticorrosion is attributed to a nontrivial Janus-doping effect in bilayer graphene, where the heavily doped bottom layer forms a strong interaction with Cu to limit the interfacial diffusion, while the nearly charge neutral top layer behaves inertly to alleviate the galvanic corrosion. Our study will likely expand the application scenarios of Cu under various extreme operating conditions.

Modularized batch production of 12-inch transition metal dichalcogenides by local element supply.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are regarded as pivotal semiconductor candidates for next-generation devices due to their atomic-scale thickness, high carrier mobility and ultrafast charge transfer. In analog to the traditional semiconductor industry, batch production of wafer-scale TMDs is the prerequisite to proceeding with their integrated circuits evolution. However, the production capacity of TMD wafers is typically constrained to a single and small piece per batch (mainly ranging from 2 to 4 inches), due to the stringent conditions required for effective mass transport of multiple precursors during growth. Here we developed a modularized growth strategy for batch production of wafer-scale TMDs, enabling the fabrication of 2-inch wafers (15 pieces per batch) up to a record-large size 12-inch wafers (3 pieces per batch). Each module, comprising a self-sufficient local precursor supply unit for robust individual TMD wafer growth, is vertically stacked with others to form an integrated array and thus a batch growth. Comprehensive characterization techniques, including optical spectroscopy, electron microscopy, and transport measurements unambiguously illustrate the high-crystallinity and the large-area uniformity of as-prepared monolayer films. Furthermore, these modularized units demonstrate versatility by enabling the conversion of as-produced wafer-scale MoS2 into various structures, such as Janus structures of MoSSe, alloy compounds of MoS2(1-x)Se2x, and in-plane heterostructures of MoS2-MoSe2. This methodology showcases high-quality and high-yield wafer output and potentially enables the seamless transition from lab-scale to industrial-scale 2D semiconductor complementary to silicon technology.

Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel.

Multilayer van der Waals (vdW) film materials have attracted extensive interest from the perspective of both fundamental research1-3 and technology4-7. However, the synthesis of large, thick, single-crystal vdW materials remains a great challenge because the lack of out-of-plane chemical bonds weakens the epitaxial relationship between neighbouring layers8-31. Here we report the continuous epitaxial growth of single-crystal graphite films with thickness up to 100,000 layers on high-index, single-crystal nickel (Ni) foils. Our epitaxial graphite films demonstrate high single crystallinity, including an ultra-flat surface, centimetre-size single-crystal domains and a perfect AB-stacking structure. The exfoliated graphene shows excellent physical properties, such as a high thermal conductivity of ~2,880 W m-1 K-1, intrinsic Young's modulus of ~1.0 TPa and low doping density of ~2.2 × 1010 cm-2. The growth of each single-crystal graphene layer is realized by step edge-guided epitaxy on a high-index Ni surface, and continuous growth is enabled by the isothermal dissolution-diffusion-precipitation of carbon atoms driven by a chemical potential gradient between the two Ni surfaces. The isothermal growth enables the layers to grow at optimal conditions, without stacking disorders or stress gradients in the final graphite. Our findings provide a facile and scalable avenue for the synthesis of high-quality, thick vdW films for various applications.

Robust growth of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply.

The precise precursor supply is a precondition for controllable growth of two-dimensional (2D) transition metal dichalcogenides (TMDs). Although great efforts have been devoted to modulating the transition metal supply, few effective methods of chalcogen feeding control were developed. Here we report a strategy of using active chalcogen monomer supply to grow high-quality TMDs in a robust and controllable manner, e.g., MoS2 monolayers perform representative photoluminescent circular helicity of ~92% and electronic mobility of ~42 cm2V-1s-1. Meanwhile, a uniform quaternary TMD alloy with three different anions, i.e., MoS2(1-x-y)Se2xTe2y, was accomplished. Our mechanism study revealed that the active chalcogen monomers can bind and diffuse freely on a TMD surface, which enables the effective nucleation, reaction, vacancy healing and alloy formation during the growth. Our work offers a degree of freedom for the controllable synthesis of 2D compounds and their alloys, benefiting the development of high-end devices with desired 2D materials.

Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire.

The growth of wafer-scale single-crystal two-dimensional transition metal dichalcogenides (TMDs) on insulating substrates is critically important for a variety of high-end applications1-4. Although the epitaxial growth of wafer-scale graphene and hexagonal boron nitride on metal surfaces has been reported5-8, these techniques are not applicable for growing TMDs on insulating substrates because of substantial differences in growth kinetics. Thus, despite great efforts9-20, the direct growth of wafer-scale single-crystal TMDs on insulating substrates is yet to be realized. Here we report the successful epitaxial growth of two-inch single-crystal WS2 monolayer films on vicinal a-plane sapphire surfaces. In-depth characterizations and theoretical calculations reveal that the epitaxy is driven by a dual-coupling-guided mechanism, where the sapphire plane-WS2 interaction leads to two preferred antiparallel orientations of the WS2 crystal, and sapphire step edge-WS2 interaction breaks the symmetry of the antiparallel orientations. These two interactions result in the unidirectional alignment of nearly all the WS2 islands. The unidirectional alignment and seamless stitching of WS2 islands are illustrated via multiscale characterization techniques; the high quality of WS2 monolayers is further evidenced by a photoluminescent circular helicity of ~55%, comparable to that of exfoliated WS2 flakes. Our findings offer the opportunity to boost the production of wafer-scale single crystals of a broad range of two-dimensional materials on insulators, paving the way to applications in integrated devices.

Wet-chemistry-assisted nanotube-substitution reaction for high-efficiency and bulk-quantity synthesis of boron- and nitrogen-codoped single-walled carbon nanotubes.

We present an innovative wet-chemistry-assisted nanotube-substitution reaction approach for the highly efficient synthesis of boron- and nitrogen-codoped single-walled carbon nanotubes (B(x)C(y)N(z)-SWNTs) in bulk quantities. The as-synthesized ternary system B(x)C(y)N(z)-SWNTs are of high purity and quality and have fairly homogeneous B and N dopant concentrations. Electrical transport measurements on SWNT-network thin-film transistors revealed that the B(x)C(y)N(z)-SWNTs were composed primarily of the semiconducting nanotubes, in contrast to the starting pristine C-SWNTs, which consisted of a heterogeneous mixture of both semiconducting and metallic types.

Continuously Graded Quantum Dots: Synthesis, Applications in Quantum Dot Light-Emitting Diodes, and Perspectives.

Colloidal quantum dot (QD) light-emitting diodes (QLEDs) hold the promise of next-generation displays and illumination owing to their excellent color saturation, high efficiency, and solution processability. For achieving high-performance light-emitting diodes (LEDs), engineering the fine compositions and structures of QDs is of paramount importance and attracts tremendous research interest. The recently developed continuously graded QDs (cg-QDs) with gradually altered nanocompositions and electronic band structures present the most advanced example in this area. In this Perspective, we summarize the current progress in LEDs based on cg-QDs, mainly concentrating on their synthesis and advantages in addressing the great challenges in QLEDs, like efficiency roll-off at high current densities, short operation lifetimes at high brightness, and low brightness near the voltage around the bandgap. In addition, we propose accessible approaches exploiting the cutting-edge mechanisms and techniques to further optimize and improve the performance of QLEDs.

Rich information on 2D materials revealed by optical second harmonic generation.

Two-dimensional (2D) materials have brought a spectacular revolution in fundamental research and industrial applications due to their unique physical properties of atomically thin thickness, strong light-matter interaction, unity valley polarization and enhanced many-body interactions. To fully explore their exotic physical properties and facilitate potential applications in electronics and optoelectronics, an effective and versatile characterization method is highly demanded. Among the many methods of characterization, optical second harmonic generation (SHG) has attracted broad attention because of its sensitivity, versatility and simplicity. The SHG technique is sufficiently sensitive at the atomic scale and therefore suitable for studies on 2D materials. More importantly, it has the capacity to acquire abundant information ranging from crystallographic, and electronic, to magnetic properties in various 2D materials due to its sensitivity to both spatial-inversion symmetry and time-reversal symmetry. These advantages accompanied by its characteristics of non-invasion and high throughput make SHG a powerful tool for 2D materials. This review summarizes recent experimental developments of SHG applications in 2D materials and also provides an outlook of potential prospects based on SHG.

Optical fibres with embedded two-dimensional materials for ultrahigh nonlinearity.

Nonlinear optical fibres have been employed for a vast number of applications, including optical frequency conversion, ultrafast laser and optical communication1-4. In current manufacturing technologies, nonlinearity is realized by the injection of nonlinear materials into fibres5-7 or the fabrication of microstructured fibres8-10. Both strategies, however, suffer from either low optical nonlinearity or poor design flexibility. Here, we report the direct growth of MoS2, a highly nonlinear two-dimensional material11, onto the internal walls of a SiO2 optical fibre. This growth is realized via a two-step chemical vapour deposition method, where a solid precursor is pre-deposited to guarantee a homogeneous feedstock before achieving uniform two-dimensional material growth along the entire fibre walls. By using the as-fabricated 25-cm-long fibre, both second- and third-harmonic generation could be enhanced by ~300 times compared with monolayer MoS2/silica. Propagation losses remain at ~0.1 dB cm-1 for a wide frequency range. In addition, we demonstrate an all-fibre mode-locked laser (~6 mW output, ~500 fs pulse width and ~41 MHz repetition rate) by integrating the two-dimensional-material-embedded optical fibre as a saturable absorber. Initial tests show that our fabrication strategy is amenable to other transition metal dichalcogenides, making these embedded fibres versatile for several all-fibre nonlinear optics and optoelectronics applications.

Sub-10 nm stable graphene quantum dots embedded in hexagonal boron nitride.

Graphene quantum dots (GQDs), a zero-dimensional material system with distinct physical properties, have great potential in the applications of photonics, electronics, photovoltaics, and quantum information. In particular, GQDs are promising candidates for quantum computing. In principle, a sub-10 nm size is required for GQDs to present the intrinsic quantum properties. However, with such an extreme size, GQDs have predominant edges with lots of active dangling bonds and thus are not stable. Satisfying the demands of both quantum size and stability is therefore of great challenge in the design of GQDs. Herein we demonstrate the fabrication of sub-10 nm stable GQD arrays by embedding GQDs into large-bandgap hexagonal boron nitride (h-BN). With this method, the dangling bonds of GQDs were passivated by the surrounding h-BN lattice to ensure high stability, meanwhile maintaining their intrinsic quantum properties. The sub-10 nm nanopore array was first milled in h-BN using an advanced high-resolution helium ion microscope and then GQDs were directly grown in them through the chemical vapour deposition process. Stability analysis proved that the embedded GQDs show negligible property decay after baking at 100 °C in air for 100 days. The success in preparing sub-10 nm stable GQD arrays will promote the physical exploration and potential applications of this unique zero-dimensional in-plane quantum material.