2D Tellurium Films Based Self-Drive Near Infrared Photodetector.

To reduce the amount of energy consumed in integrated circuits, high efficiency with the lowest energy is always expected. Self-drive device is one of the options in the pursuit of low power nanodevices. It is a typical strategy to form an internal electric field by constructing a heterojunction in self-drive semiconductor system. Here, a two-step method is proposed to prepare high quality centimeter-sized 2D tellurium (Te) thin film with hall mobility as high as 37.3 cm2 V-1 s-1, and the 2D Te film is further assembled with silicon to form a heterojunction for self-drive photodetector, which can realize effective detection from visible to near infrared bands. The photodetectivity of the heterojunctions can reach 1.58×1011 Jones under the illumination of 400 nm@ 1.615 mW/cm2 and 2.08×108 Jones under the illumination of 1550 nm@ 1.511 mW/cm2 without bias. Our experiments demonstrate the potential of 2D tellurium thin films for wide band and near infrared integrated device applications.

Tuning the magnetic properties of van der Waals Fe3GaTe2 crystals by Co doping.

Tuning the magnetic properties of two-dimensional van der Waals ferromagnets has special importance for their practical applications. Using first-principles calculations, we investigate the magnetic properties of Co-doped Fe3GaTe2 with different Co concentrations and different Co atomic sites. Calculation results show that Fe or Co atoms with relatively lower atomic concentrations preferentially occupy Fe1 sites with interlayer coupling, which is more energetically favorable. As the doping concentration of Co atoms increases, the total magnetic moment of the doped system decreases, while the average atomic magnetic moments of Fe1 and Fe2 increase and decrease, respectively, with Fe1 reaching ∼2.08µB. The spin polarization of the doped model 2Co-2 near the Fermi energy level is significantly reduced, while 4Co-3 exhibits an enhanced trend. At some doping level, a phase change from ferromagnetism to antiferromagnetism appears at high Co concentration. These results provide a theoretical basis for experimental studies and valuable information for the development of Fe3GaTe2-based spintronic devices.

Ultrasensitive Label-Free DNA Detection Based on Solution-Gated Graphene Transistors Functionalized with Carbon Quantum Dots.

Developing highly sensitive, reliable, cost-effective label-free DNA biosensors is challenging with traditional fluorescence, electrochemical, and other techniques. Most conventional methods require labeling fluorescence, enzymes, or other complex modification. Herein, we fabricate carbon quantum dot (CQD)-functionalized solution-gated graphene transistors for highly sensitive label-free DNA detection. The CQDs are immobilized on the surface of the gate electrode through mercaptoacetic acid with the thiol group. A single-stranded DNA (ssDNA) probe is immobilized on CQDs by strong π-π interactions. The ssDNA probe can hybridize with the ssDNA target and form double-stranded DNA, which led to a shift of Dirac voltage and the channel current response. The limit of detection can reach 1 aM which is 2-5 orders of magnitude lower than those of other methods reported previously. The sensor also exhibits a good linear range from 1 aM to 0.1 nM and has good specificity. It can effectively distinguish one-base mismatched target DNA. The response time is about 326 s for the 1 aM target DNA molecules. This work provides good perspectives on the applications in biosensors.

Aptamer-Based Solution-Gated Graphene Transistors for Highly Sensitive and Real-Time Detection of Thrombin Molecules.

Thrombin is an important biomarker for various diseases and biochemical reactions. Rapid and real-time detection of thrombin that quickly neutralizes in early coagulation in the body has gained significant attention for its practical applications. Solution-gated graphene transistors (SGGTs) have been widely studied due to their higher sensitivity and low-cost fabrication for chemical and biological sensing applications. In this paper, the ssDNA aptamer with 29 bases was immobilized on the surface of the gate electrode to specifically recognize thrombin. The SGGT sensor achieved high sensitivity with a limit of detection (LOD) up to fM. The LOD was attributed to the amplification function of SGGTs and the suitable aptamer choice. The ssDNA configuration folding induced by thrombin molecules and the electropositivity of thrombin molecules could arouse the same electrical response of SGGTs, helping the device obtain a high sensitivity. The channel current variation of sensors had a good linear relationship with the logarithm of thrombin concentration in the range of 1 fM to 10 nM. The fabricated device also demonstrated a short response time to thrombin molecules, and the response time to the 1 fM thrombin molecules was about 150 s. In summary, the sensing strategy of aptamer-based SGGTs with high sensitivity and high selectivity has a good prospect in medical diagnosis.

Robust Magnetic Proximity Induced Anomalous Hall Effect in a Room Temperature van der Waals Ferromagnetic Semiconductor Based 2D Heterostructure.

Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with 2D topological semimetals are pivotal for advancing next-generation spintronic and quantum devices. However, most van der Waals ferromagnetic semiconductors exhibit ferromagnetism only at low temperatures, limiting the proximity research on their interfaces with topological semimetals. Here, an intrinsic, van der Waals layered room-temperature ferromagnetic semiconductor crystal, FeCr0.5Ga1.5Se4 (FCGS), is reported with a Curie temperature (TC) as high as 370 K, setting a new record for van der Waals ferromagnetic semiconductors. The saturation magnetization at low temperature (2 K) and room temperature (300 K) reaches 8.2 and 2.7 emu g-1, respectively. Furthermore, FCGS possesses a bandgap of ≈1.2 eV, which is comparable to the widely used commercial silicon. The FCGS/graphene 2D heterostructure exhibits an impeccably smooth and gapless interface, thereby inducing a robust van der Waals magnetic proximity coupling effect between FCGS and graphene. After the proximity coupling, graphene undergoes a charge carrier transition from electrons to holes, accompanied by a transition from non-magnetic to ferromagnetic transport behavior with robust anomalous Hall effect (AHE). Notably, the van der Waals magnetic proximity-induced AHE remains robust even up to 400 K.

The Gate-Modified Solution-Gated Graphene Transistors for the Highly Sensitive Detection of Lead Ions.

Lead ions are heavy metal ions that are extremely harmful to the human body and ecological environment. They can cause irreversible damage to the human nervous system and blood system at low concentrations. It is very important to develop a simple, rapid, and sensitive detection method of Pb2+. Solution-gated graphene transistors (SGGTs) have been widely studied in recent years due to their ultra-high sensitivity in chemical sensing. Herein, we have demonstrated a sensitive sensor of Pb2+ based on the SGGTs through the glutathione gate modification. When Pb2+ are added into the electrolyte solution, the electrical double layer capacitance near the gate electrode changes because Pb2+ can be strongly chelated, leading to the channel current change. The detection of Pb2+ can be realized. The detection limit of sensors for Pb2+ can reach 1 × 10-18 M, and the response time is about 1 s. The channel current change and the logarithm of Pb2+ concentration exhibit a good linear relationship in the concentration range of 1 × 10-18 and 1 × 10-6 M. Because the glutathione molecule can well recognize Pb2+, the devices also demonstrate good selectivity to Pb2+. Compared with the convention detection, our method shows easy operation, high sensitivity, and high selectivity. Therefore, it has great potential in the analysis of trace samples for health and environment monitoring.