New Insights towards High-Temperature Ethanol-Sensing Mechanism of ZnO-Based Chemiresistors.

In this work, we investigate ethanol (EtOH)-sensing mechanisms of a ZnO nanorod (NRs)-based chemiresistor using a near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS). First, the ZnO NRs-based sensor was constructed, showing good performance on interaction with 100 ppm of EtOH in the ambient air at 327 °C. Then, the same ZnO NRs film was investigated by NAP-XPS in the presence of 1 mbar oxygen, simulating the ambient air atmosphere and O2/EtOH mixture at the same temperature. The partial pressure of EtOH was 0.1 mbar, which corresponded to the partial pressure of 100 ppm of analytes in the ambient air. To better understand the EtOH-sensing mechanism, the NAP-XPS spectra were also studied on exposure to O2/EtOH/H2O and O2/MeCHO (MeCHO = acetaldehyde) mixtures. Our results revealed that the reaction of EtOH with chemisorbed oxygen on the surface of ZnO NRs follows the acetaldehyde pathway. It was also demonstrated that, during the sensing process, the surface becomes contaminated by different products of MeCHO decomposition, which decreases dc-sensor performance. However, the ac performance does not seem to be affected by this phenomenon.

Chemical vapor deposition of germanium-rich CrGe x nanowires.

Chemical vapor deposition was applied to synthetize nanostructured deposits containing several sorts of nanoobjects (i.e., nanoballs, irregular particles, and nanowires). Analytical techniques, that is, high-resolution transmission electron microscopy, scanning electron microscopy, electron dispersive X-ray analysis, selected area electron diffraction, and X-ray photoelectron spectroscopy, showed that unlike nanoballs and particles composed of crystalline germanium, the layer was made of chromium germanide CrGe x . The nanowires possessed a complex structure, namely a thin crystalline germanium core and amorphous CrGe x coating. The composition of the nanowire coating was [Cr]/[Ge] = 1:(6-7). The resistance of the nanowire-deposit system was estimated to be 2.7 kΩ·cm using an unique vacuum contacting system.

Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates.

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

Insight into Nanoparticle Charging Mechanism in Nonpolar Solvents To Control the Formation of Pt Nanoparticle Monolayers by Electrophoretic Deposition.

We report on the formation of Pt nanoparticle monolayers by electrophoretic deposition from nonpolar solvents. First, the growth kinetics of Pt nanoparticles prepared by the reverse micelle technique are described in detail. Second, a model of nanoparticle charging in nonpolar media is discussed and methods to control the nanoparticle charging are proposed. Finally, essential parameters of the electrophoretic deposition process to control the deposition of nanoparticle monolayers are discussed and mechanisms of their formation are analyzed.

Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP.

Electrophoretic deposition of palladium nanoparticles prepared by the reverse micelle technique onto InP substrates is addressed. We demonstrate that the substrate pre-deposition treatment and the deposition conditions can extensively influence the morphology of the deposited palladium nanoparticle films. Schottky diodes based on these films show notably high values of the barrier height and of the rectification ratio giving evidence of a small degree of the Fermi level pinning. Moreover, electrical characteristics of these diodes are exceptionally sensitive to the exposure to gas mixtures with small hydrogen content.