Multielemental single-atom-thick A layers in nanolaminated V2(Sn, A) C (A = Fe, Co, Ni, Mn) for tailoring magnetic properties.

Tailoring of individual single-atom-thick layers in nanolaminated materials offers atomic-level control over material properties. Nonetheless, multielement alloying in individual atomic layers in nanolaminates is largely unexplored. Here, we report 15 inherently nanolaminated V2(A xSn1-x)C (A = Fe, Co, Ni, Mn, and combinations thereof, with x ∼ 1/3) MAX phases synthesized by an alloy-guided reaction. The simultaneous occupancy of the 4 magnetic elements and Sn in the individual single-atom-thick A layers constitutes high-entropy MAX phase in which multielemental alloying exclusively occurs in the 2-dimensional (2D) A layers. V2(A xSn1-x)C exhibit distinct ferromagnetic behavior that can be compositionally tailored from the multielement A-layer alloying. Density functional theory and phase diagram calculations are performed to understand the structure stability of these MAX phases. This 2D multielemental alloying approach provides a structural design route to discover nanolaminated materials and expand their chemical and physical properties. In fact, the magnetic behavior of these multielemental MAX phases shows strong dependency on the combination of various elements.

Role of the A-Element in the Structural, Mechanical, and Electronic Properties of Ti3AC2 MAX Phases.

Combining metallic and ceramic properties, and as precursors for MXenes, MAX phases have attracted extensive attention. In recent years, A-element substitution has been demonstrated as an effective scheme to enrich the MAX family. To explore more possible MAX members, the structural, mechanical, and electronic properties and stabilities of 31 Ti3AC2 (A = Al, Si, P, S, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Os, Ir, Pt, Au, Hg, TI, Pb, Bi, and Po) configurations are investigated in this work. Moreover, the interfacial strength implicating the possibility of exfoliating MAX into MXenes is examined. The A-element plays a crucial role in the lattice parameters and mechanical strength of Ti3AC2, and their variations are well explained by the synergistic effects of d-d and p-d hybridizations between the valence orbitals of Ti and A. Ti3SC2 presents the largest Young's modulus of 360 GPa, which is 6.82% higher than that in the well-studied Ti3SiC2. Ti3SbC2 is a mechanical quasi-isotropic configuration. After checking the mechanical, dynamical, and thermodynamic stability, Ti3AC2 (A = Al, Si, P, S, Ga, Ge, As, Cd, In, Sn, Sb, Au, Hg, Pb, TI, and Po) are stable, while Ti3AC2 (A = Fe, Co, Zn, Se, Ru, Rh, Pd, Ag, Te, Ir, Pt, and Bi) are metastable. Compared to Ti3AlC2, Ti3AC2 (A = Ag, Sb, Te, Bi, and Po) exhibit much lower interfacial strength in Ti-A interfaces and larger ratios between the interfacial strengths of neighboring Ti-C and Ti-A interfaces. This implies that these configurations are promising precursors for the synthesis of Ti3C2Tx (Tx denotes surface groups) with a large flake size. All of the configurations are metallic, and Ti3AC2 (A = Fe and Co) are magnetic. Based on the phonon dispersion and electronic structure, these Ti3AC2 configurations might have potential applications in phononic crystals and topological materials.

A general Lewis acidic etching route for preparing MXenes with enhanced electrochemical performance in non-aqueous electrolyte.

Two-dimensional carbides and nitrides of transition metals, known as MXenes, are a fast-growing family of materials that have attracted attention as energy storage materials. MXenes are mainly prepared from Al-containing MAX phases (where A = Al) by Al dissolution in F-containing solution; most other MAX phases have not been explored. Here a redox-controlled A-site etching of MAX phases in Lewis acidic melts is proposed and validated by the synthesis of various MXenes from unconventional MAX-phase precursors with A elements Si, Zn and Ga. A negative electrode of Ti3C2 MXene material obtained through this molten salt synthesis method delivers a Li+ storage capacity of up to 738 C g-1 (205 mAh g-1) with high charge-discharge rate and a pseudocapacitive-like electrochemical signature in 1 M LiPF6 carbonate-based electrolyte. MXenes prepared via this molten salt synthesis route may prove suitable for use as high-rate negative-electrode materials for electrochemical energy storage applications.

A Two-Dimensional Zirconium Carbide by Selective Etching of Al3C3 from Nanolaminated Zr3Al3C5.

The room-temperature synthesis of a new two-dimensional (2D) zirconium-containing carbide, Zr3C2T(z) MXene is presented. In contrast to traditional preparation of MXene, the layered ternary Zr3Al3C5 material instead of MAX phases is used as source under hydrofluoric acid treatment. The structural, mechanical, and electronic properties of the synthesized 2D carbide are investigated, combined with first-principles density functional calculations. A comparative study on the structrual stability of our obtained 2D Zr3C2T(z) and Ti3C2T(z) MXenes at elevated temperatures is performed. The obtained 2D Zr3C2T(z) exhibits relatively better ability to maintain 2D nature and strucural integrity compared to Ti-based Mxene. The difference in structural stability under high temperature condition is explained by a theoretical investigation on binding energy.

New insight into the helium-induced damage in MAX phase Ti3AlC2 by first-principles studies.

In the present work, the behavior of He in the MAX phase Ti3AlC2 material is investigated using first-principle methods. It is found that, according to the predicted formation energies, a single He atom favors residing near the Al plane in Ti3AlC2. The results also show that Al vacancies are better able to trap He atoms than either Ti or C vacancies. The formation energies for the secondary vacancy defects near an Al vacancy or a C vacancy are strongly influenced by He impurity content. According to the present results, the existence of trapped He atoms in primary Al vacancy can promote secondary vacancy formation and the He bubble trapped by Al vacancies has a higher tendency to grow in the Al plane of Ti3AlC2. The diffusion of He in Ti3AlC2 is also investigated. The energy barriers are approximately 2.980 eV and 0.294 eV along the c-axis and in the ab plane, respectively, which means that He atoms exhibit faster migration parallel to the Al plane. Hence, the formation of platelet-like bubbles nucleated from the Al vacancies is favored both energetically and kinetically. Our calculations also show that the conventional spherical bubbles may be originated from He atoms trapped by C vacancies. Taken together, these results are able to explain the observed formation of bubbles in various shapes in recent experiments. This study is expected to provide new insight into the behaviors of MAX phases under irradiation from electronic structure level in order to improve the design of MAX phase based materials.

Point defect weakened thermal contraction in monolayer graphene.

We investigate the thermal expansion behaviors of monolayer graphene and three configurations of graphene with point defects, namely the replacement of one carbon atom with a boron or nitrogen atom, or of two neighboring carbon atoms by boron-nitrogen atoms, based on calculations using first-principles density functional theory. It is found that the thermal contraction of monolayer graphene is significantly decreased by point defects. Moreover, the corresponding temperature for negative linear thermal expansion coefficient with the maximum absolute value is reduced. The cause is determined to be point defects that enhance the mechanical strength of graphene and then reduce the amplitude and phonon frequency of the out-of-plane acoustic vibration mode. Such defect weakening of graphene thermal contraction will be useful in nanotechnology to diminish the mismatching or strain between the graphene and its substrate.

Surface potential-determined performance of Ti3C2T2 (T = O, F, OH) and Zr3C2T2 (T = O, F, OH, S) MXenes as anode materials of sodium ion batteries.

Sodium ion batteries (SIBs) have attracted increasing attention due to their low cost and abundant reserves of sodium, but their ideal anode materials still need to be explored. MXenes could be candidate electrode materials due to their excellent electrical conductivity and large specific surface area. In this work, the theoretical performance of Ti- and Zr-containing MXenes Ti3C2T2 (T = O, F, OH) and Zr3C2T2 (T = O, F, OH, S) as SIB anode materials is investigated. The influence of the Hubbard U correction is discussed, and the behaviour at the MXene surface with the partial occupation of sodium atoms is considered. Including the weight and volume of adsorbed sodium atoms, Ti3C2O2 presents the best performance among the seven MXenes studied. Its mass and volumetric capacities are 299 mA h g-1 and 993 mA h cm-3 respectively, and the migration barrier and open circuit voltage are 0.138 eV and 0.421 V. Both Zr3C2O2 and Zr3C2S2 can adsorb double layers of sodium atoms on both sides, and the former shows a higher capacity because of its lower weight and smaller volume. The mass and volumetric capacities of Zr3C2O2 are 254 mA h g-1 and 913 mA h cm-3 respectively. More importantly, the surface potential is determined to be an effective descriptor for selecting electrode materials. The migration barrier is proportional to the fluctuation amplitude of the surface potential. A low surface potential generally implies a high capacity. A large open circuit voltage is prone to appear in the structure with a large fluctuation amplitude and a low average value of its surface potential.

Two-Dimensional Half-Metallic and Semiconducting Lanthanide-Based MXenes.

As a large family of two-dimensional materials, MXenes have attracted intensive attention in recent years. For more functional applications, it is of great significance to determine new MXene members. Here, we theoretically expand the M elements of MXenes to the lanthanide series. Based on density functional theory calculations, the bare lanthanide-based carbides M2C (M = Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Yb) and the corresponding fluorine- and hydroxyl-terminated configurations are investigated. Most of the fluorine- and hydroxyl-terminated MXenes investigated are half-metals. Specifically, in the half-metallic Eu2CF2, the spin-down states show a band gap larger than 2 eV, implying this configuration's potential applications in spin generation and injection. Both Gd2CT2 (T = F and OH) are magnetic semiconductors. The former shows an indirect band gap of 1.38 eV, while the latter presents a direct one of 0.882 eV. These two configurations also show large magnetic moments higher than 13.7 µB per unit cell. All the hydroxyl-terminated MXene members show relatively low work functions, with the lowest value of 1.46 eV determined in Tm2C(OH)2. These predicted electronic properties imply that the lanthanide-based MXenes could have potential applications in spintronics, information storage, near-infrared detectors, field effect transistors, and field emitter cathodes.

Mo2B, an MBene member with high electrical and thermal conductivities, and satisfactory performances in lithium ion batteries.

Owing to their high specific area, good flexibility and many other unique properties, two-dimensional (2D) materials have attracted extensive attention in the recent two decades. As an analogy to the well-studied MXenes, MBenes also emerged. In this work, Mo2B, an MBene member, is predicted both in H- and T-type configurations from first-principles calculations. Structural, mechanical, electronic, and thermal properties, and performances in lithium ion batteries (LIBs) for both configurations are investigated. The H-type Mo2B is found to be the stable structure, which can be transformed into the T-type by applying strains. The elastic constants c 11 in the H- and T-type Mo2B are respectively calculated to be 187.5 and 157.6 N m-1, which are higher than that in the previously reported Mo2C. The electronic thermal conductivity and electrical conductivity are investigated based on the semiclassical Boltzmann transport theory. The electrical conductivities for both structures are of the order of 106 Ω-1 m-1. Because of the large phonon contributions, the thermal conductivities in the H- and T-type Mo2B are much higher than that of the synthesized Mo2C. Based on a 5 µm flake length, the phonon thermal conductivities at room temperature are calculated to be 146 and 141 W m-1 K-1 respectively for the H- and T-type configurations. The T-type Mo2B shows promising performances in LIBs. The theoretical volumetric capacity is as high as 2424 mA h cm-3, and the migration energy barrier is as low as 0.0372 eV. These data imply that Mo2B has widespread applications, such as in conductive films and anode materials.

First-principles study of magnetism in some novel MXene materials.

Magnetic two-dimensional materials have gained considerable attention in recent years due to their special topologies and promising applications in electronic and spintronic devices. As a new family of two-dimensional materials, MXene materials may have unusual magnetic properties. In this work, the structural stabilities and electronic properties of 1H and 1T type pristine M2C (M = Sc, Ti, Fe, Co, Ni, Cu, Zn) MXenes with different magnetic configurations were calculated and compared. The critical temperatures of the magnetic MXenes were evaluated through Monte Carlo simulations using the spin-exchange coupling parameters. The results suggest that the ground-state 1T-Ti2C and 1T-Fe2C, 1H-Co2C MXenes are antiferromagnetic or ferromagnetic materials with high Néel or Curie temperatures. Different from the other pristine M2C MXenes with metallic properties, indirect band gaps were found for the 1T-Ti2C and 1T-Ni2C MXenes, which may be useful for their application in information storage or sensors. The findings are expected to promote the development of novel devices based on MXenes and their magnetic properties.

Structural, mechanical and electronic properties of two-dimensional chlorine-terminated transition metal carbides and nitrides.

Two-dimensional transition metal carbides and nitrides (MXenes) have attracted intensive attention since 2011, and surface groups have been determined to show a key role in MXene properties. Recently, an emerging functional group of chlorine was realized in MXenes, such as in Ti3C2Cl2 and Ti2CCl2. In order to understand and apply MXenes terminated by this type functional group, the structural, mechanical and electronic properties of M2X2Cl2 and M3X2Cl2 (M = Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W; X = C, N) are investigated in this work from first-principles theory. For M2X2Cl2, the chlorine groups are all stabilized on the top-sites of the bottom M atoms on both sides. In M3X2Cl2, the surface groups of most configurations are functionalized on the top-sites of the middle M atoms. Regarding to the mechanical properties, the elastic constants vary significantly with the types of M and X elements. The highest Young modulus of 208.3 GPa is determined in Ta3C2Cl2. The mechanical, dynamical and thermodynamic stabilities are further tested. Thirteen members.ie. M2CCl2 (M = Sc, Ti, Zr, Nb, Hf), M2NCl2 (M = Sc, Zr), M3C2Cl2 (M = Ti, Zr, Hf) and M3N2Cl2 (M = Sc, Ti, Zr) are determined to be stable. In addition, Ta2CCl2, Hf2NCl2, M3C2Cl2 (M = Sc, Nb, Ta) and Hf3N2Cl2 could be metestable. For these stable and metastable configurations, the electronic structures and work functions are studied. Most configurations are metallic, except for Sc2CCl2, Zr3N2Cl2 and Hf3N2Cl2. These three members are indirect band gap semiconductors, with their band gap values of 1.65, 0.135 and 0.246 eV, respectively. All the structures show high work functions, and the smallest value is approximate to 3.97 eV determined in Ti2CCl2. Our work implies that the chlorine-functionalized MXenes could be utilized in semiconductors and metallic films.

Two-dimensional semiconducting Lu2CT2 (T = F, OH) MXene with low work function and high carrier mobility.

As a new family of two-dimensional materials, MXenes have attracted increasing attention in recent years due to their widespread potential applications. In contrast to early transition metals in convention, here we expand the M element of MXene to the rare earth element lutetium. Based on the first-principles density functional calculations, the bare lutetium-based carbide MXene Lu2C is determined to be stabilized in the T-type configuration. Furthermore, both fluorine and hydroxyl terminated configurations are found to be semiconductors, and their band gaps are suitable for use in semiconductors and visible and near-infrared optical devices. The Lu2C(OH)2 configuration shows a direct band gap and possesses an ultralow work function of 1.4 eV. Both Lu2CT2 (T = F, OH) MXenes exhibit high carrier mobilities. Particularly, the electron mobility of the Lu2C(OH)2 MXene is found to be anisotropic at room temperature, with values as high as 95.19 × 103 and 217.1 × 103 cm2 V-1·s-1 in the zigzag and armchair directions, respectively, which makes Lu2C(OH)2 a promising material for nanodevices. Based on these predicted properties, our work widens the range of MXene materials and their applications in semiconducting devices.

Two-Dimensional Hydroxyl-Functionalized and Carbon-Deficient Scandium Carbide, ScC xOH, a Direct Band Gap Semiconductor.

Two-dimensional (2D) materials have attracted intense attention in nanoscience and nanotechnology due to their outstanding properties. Among these materials, the emerging family of 2D transition metal carbides, carbonitrides, and nitrides (referred to as MXenes) stands out because of the vast available chemical space for tuning materials chemistry and surface termination, offering opportunities for property tailoring. Specifically, semiconducting properties are needed to enable utilization in optoelectronics, but direct band gaps are experimentally challenging to achieve in these 2D carbides. Here, we demonstrate the fabrication of 2D hydroxyl-functionalized and carbon-deficient scandium carbide, namely, ScC xOH, by selective etching of a layered parent ScAl3C3 compound. The 2D configuration is determined as a direct band gap semiconductor, with an experimentally measured band gap approximated at 2.5 eV. Furthermore, this ScC xOH-based device exhibits excellent photoresponse in the ultraviolet-visible light region (responsivity of 0.125 A/W at 360 nm/10 V, and quantum efficiency of 43%). Thus, this 2D ScC xOH direct band gap semiconductor may find applications in visible light detectors, photocatalytic chemistry, and optoelectronic devices.

Single-Atom-Thick Active Layers Realized in Nanolaminated Ti3(AlxCu1-x)C2 and Its Artificial Enzyme Behavior.

A Ti3(AlxCu1-x)C2 phase with Cu atoms with a degree of ordering in the A plane is synthesized through the A site replacement reaction in CuCl2 molten salt. The weakly bonded single-atom-thick Cu layers in a Ti3(AlxCu1-x)C2 MAX phase provide actives sites for catalysis chemistry. As-synthesized Ti3(AlxCu1-x)C2 presents unusual peroxidase-like catalytic activity similar to that of natural enzymes. A fabricated Ti3(AlxCu1-x)C2/chitosan/glassy carbon electrode biosensor prototype also exhibits a low detection limit in the electrochemical sensing of H2O2. These results have broad implications for property tailoring in a nanolaminated MAX phase by replacing the A site with late transition elements.

First-principles study on the electrical and thermal properties of the semiconducting Sc3(CN)F2 MXene.

The two-dimensional materials MXenes have recently attracted interest for their excellent performance from diverse perspectives indicated by experiments and theoretical calculations. For the application of MXenes in electronic devices, the exploration of semiconducting MXenes arouses particular interest. In this work, despite the metallic properties of Sc3C2F2 and Sc3N2F2, we find that Sc3(CN)F2 is a semiconductor with an indirect band gap of 1.18 eV, which is an expansion of the semiconducting family members of MXene. Using first-principles calculations, the electrical and thermal properties of the semiconducting Sc3(CN)F2 MXene are studied. The electron mobilities are determined to possess strong anisotropy, while the hole mobilities show isotropy, i.e. 1.348 × 103 cm2 V-1 s-1 along x, 0.319 × 103 cm2 V-1 s-1 along the y directions for electron mobilities, and 0.517 × 103 cm2 V-1 s-1 along x, 0.540 × 103 cm2 V-1 s-1 along the y directions for hole mobilities. The room-temperature thermal conductivity along the Γ â†’ M direction is determined to be 123-283 W m-1 K-1 with a flake length of 1-100 µm. Besides, Sc3(CN)F2 presents a relatively high specific heat of 547 J kg-1 K-1 and a low thermal expansion coefficient of 8.703 × 10-6 K-1. Our findings suggest that the Sc3(CN)F2 MXene might be a candidate material in the design and application of 2D nanoelectronic devices.

Bipolar magnetic semiconductors among intermediate states during the conversion from Sc2C(OH)2 to Sc2CO2 MXene.

MXenes represent a new family of two-dimensional materials that have attracted considerable attention in recent years. Because of the remarkably different structures of Sc2C(OH)2 and Sc2CO2 MXene and their recently reported properties, this study explored the structural evolution and mechanism of chemical conversion between these two MXenes. Using first-principles density functional theory (DFT), the mechanism for dehydrogenation/hydrogenation is investigated by gradually removing/adding surface hydrogen atoms for Sc2C(OH)2/Sc2CO2 supercells. Employing three different supercells (2 × 2 × 1, 3 × 3 × 1 and 4 × 4 × 1), intermediate states Sc2C(OH)xO2-x with varying hydrogen content x (0.0625≤x ≤ 1.94) are obtained. The results show that the trend is to minimize the difference in the number of hydrogen atoms and the distance between them on the two sides of the monolayer. This feature is found to be generally applicable to other functional groups of MXenes during surface conversion. Analysis of these structures shows that all the oxygen, carbon and scandium atoms remain in essentially the same locations as in Sc2C(OH)2 until atoms rearrange in the carbon layer at sufficiently low x. Regarding the electronic properties, the behavior of the rearranged configurations is found to depend on the structure, moving beyond the conventional model of p-type doping induced by dehydrogenation. Bipolar magnetic semiconductors (BMSs) are identified from these rearranged configurations by the inhomogeneous distribution of hydrogen atoms on the different sides and x values approximately in the range of 0.188 ≤ x ≤ 0.812. Findings from this study suggest that the intrinsic spin-polarized semiconducting characteristics of Sc2C(OH)xO2-x are expected to be experimentally observable if samples are prepared as nanoscale flakes. The current results indicate that Sc-based MXene may be a promising material for nanoscale spintronic devices.

Controllable magnitude and anisotropy of the electrical conductivity of Hf3C2O2 MXene.

Hf3C2O2, a new MXene member synthesized recently, was predicted to be a semi-metal with high mechanical strength. Based on the unique electronic structure, the energy bands and electrical conductivities of the MXene under various strains are comprehensively investigated in this paper. Biaxial and two orthogonal uniaxial strains in both compressive and tensile manners are studied. Results from this study suggest that Hf3C2O2 shows a transition between semi-metal and semi-conductor under both biaxial and uniaxial strains. A compressive strain generally induces a larger energy overlap between the conduction band minimum and the valance band maximum, while a tensile strain reduces the energy band overlap and even opens a band gap. As a consequence, the magnitude of electrical conductivity decreases drastically from compressive to tensile strains applied. Moreover, the uniaxial strains are determined to be efficient in manipulating the anisotropy of the electrical conductivity. These data imply that the Hf3C2O2 MXene is a promising candidate material for devices such as strain sensors.

Synthesis and Electrochemical Properties of Two-Dimensional Hafnium Carbide.

We demonstrate fabrication of a two-dimensional Hf-containing MXene, Hf3C2Tz, by selective etching of a layered parent Hf3[Al(Si)]4C6 compound. A substitutional solution of Si on Al sites effectively weakened the interfacial adhesion between Hf-C and Al(Si)-C sublayers within the unit cell of the parent compound, facilitating the subsequent selective etching. The underlying mechanism of the Si-alloying-facilitated etching process is thoroughly studied by first-principles density functional calculations. The result showed that more valence electrons of Si than Al weaken the adhesive energy of the etching interface. The MXenes were determined to be flexible and conductive. Moreover, this 2D Hf-containing MXene material showed reversible volumetric capacities of 1567 and 504 mAh cm-3 for lithium and sodium ions batteries, respectively, at a current density of 200 mAg-1 after 200 cycles. Thus, Hf3C2Tz MXenes with a 2D structure are candidate anode materials for metal-ion intercalation, especially for applications where size matters.

The thermal and electrical properties of the promising semiconductor MXene Hf2CO2.

With the growing interest in low dimensional materials, MXenes have also attracted considerable attention recently. In this work, the thermal and electrical properties of oxygen-functionalized M2CO2 (M = Ti, Zr, Hf) MXenes are investigated using first-principles calculations. Hf2CO2 is determined to exhibit a thermal conductivity better than MoS2 and phosphorene. The room-temperature thermal conductivity along the armchair direction is determined to be 86.25~131.2 Wm(-1) K(-1) with a flake length of 5~100 µm. The room temperature thermal expansion coefficient of Hf2CO2 is 6.094 × 10(-6) K(-1), which is lower than that of most metals. Moreover, Hf2CO2 is determined to be a semiconductor with a band gap of 1.657 eV and to have high and anisotropic carrier mobility. At room temperature, the Hf2CO2 hole mobility in the armchair direction (in the zigzag direction) is determined to be as high as 13.5 × 10(3) cm(2)V(-1)s(-1) (17.6 × 10(3) cm(2)V(-1)s(-1)). Thus, broader utilization of Hf2CO2, such as the material for nanoelectronics, is likely. The corresponding thermal and electrical properties of Ti2CO2 and Zr2CO2 are also provided. Notably, Ti2CO2 presents relatively lower thermal conductivity but much higher carrier mobility than Hf2CO2. According to the present results, the design and application of MXene based devices are expected to be promising.