RESUMO
The demand for a high-performance position sensitive detector (PSD), a novel type of photoelectric sensor, is increasing due to advancements in digitization and automation technology. Cadmium sulfide (CdS), a non-centrosymmetric material, holds significant potential in photoelectric devices. However, the pyroelectric effect of CdS in PSDs and its influence on lateral photoresponse are still unknown. In this work, we fabricated an ITO/CdS/Si heterojunction using chemical bath deposition (CBD) and investigated the pyro-phototronic effect under nonuniform illumination. The theory of electron-hole pairs' generation, separation, and carrier diffusion was carefully considered to understand the underlying mechanisms. Our experimental findings revealed that the device exhibited an exceptionally high position sensitivity (PS) of 1061.3 mV/mm, surpassing the generally observed PS of 655.1 mV/mm induced by single photovoltaic effect by 160.5%. Meanwhile, the PSD demonstrated rapid response times of 0.01 and 0.04 ms, respectively. Moreover, the influence of ambient temperature and electrode distance on the pyro-phototronic effect was well analyzed. Notably, the PSD exhibited remarkable stability even at ambient temperatures up to 150 °C. Despite the considerable working distance of 11 mm, the PS of the PSD remained at 128.99 mV/mm. These findings provide valuable theoretical and experimental foundations for optimizing the design and implementation of high-performance large working distance PSDs.
RESUMO
An electron transport layer (ETL) with a suitable gradient energy level can enhance electron transfer, suppress carrier recombination, and effectively improve the photoresponse of photodetectors (PDs). In this letter, a series of ITO/ZnO/CdS/MAPbI3/Spiro-OMeTAD heterojunction PDs were prepared by incorporating a ZnO layer at the CdS/ITO interface upon varying the thickness from 0 to 95 nm. The optimized band arrangement in the PD results in an excellent self-powering ability and improved photoresponse. Moreover, both the photovoltaic and pyroelectric responses strongly correlate with the thickness of the ZnO layer. The PD with an optimal ZnO thin film thickness of 50 nm achieves a huge responsivity (R) of 1.19 × 104 V/W and detectivity (D) of 2.22 × 109 Jones, primarily due to the strengthened pyro-phototronic effects enabled by the dual ETL layers. In addition, the enhanced pyroelectric effect broadens the spectral range of the PD to 360-1550 nm, largely surpassing the band gap of the heterojunction.
RESUMO
Cu(In,Ga)Se2 (CIGS) based multilayer heterojunction, as one of the best high efficiency thin film solar cells, has attracted great interest due to its outstanding features. However, the present studies are primarily focused on the structure optimization and modulation in order to enhance the photoelectric conversion efficiency. Here, we exploit another application of this multilayer heterostructure in photoresistance-modulated position sensitive detector by introducing lateral photoresistance effect. The lateral photoresistance measurements show that this multilayer heterojunction exhibits a wide spectral response (~330 to ~1150 nm) and excellent bipolar photoresistance performances (position sensitivity of ~63.26 Ω/mm and nonlinearity <4.5%), and a fast response speed (rise and fall time of ~14.46 and ~14.42 ms, respectively). More importantly, based on the lateral photoresistance effect, the CIGS heterostructure may also be developed as a position-dependent resistance memory device, which can be modulated by changing laser intensity, wavelength, and bias voltage with excellent stability and repeatability, and the position resolution reaches up to 1 µm. These results can be well explained by considering the diffusion and the drift model of carriers in the CIGS multilayer heterojunction. This work provides a new approach of achieving novel photoelectric sensors and memory devices based on the traditional photovoltaic heterostructures.