Negative life events predict depressive trends: the moderating effect of overgeneral autobiographical memory and early parenting behaviour.

The Emerging Adulthood is a complex and chaotic period and depression is one of the main psychological health problems during this period. Overgeneral autobiographical memory (OGM) is prevalent among patients with clinical depression. However, the prediction of OGM in groups with non-clinical depression and its influencing mechanisms remain inconclusive. Studies have shown that OGM and early parenting behaviour are vulnerable factors of depression in emerging adulthood, which may be triggered by negative life events. Our longitudinal study included 241 participants (Mage = 21.88 years). At baseline, participants completed measures of current negative life events, depression, early parenting behaviour and an autobiographical memory test. Thereafter, they were tracked for depression every 35 days. We used the latent class growth model to differentiate levels and trends of depression among non-clinical participants. The analysis showed that the effect of negative life events on depression was moderated by OGM and early parenting behaviour. However, this moderating effect was found only in the low-risk depression group. Our findings indicate that early parenting behaviour might account for the different mechanisms of OGM production in non-clinical groups. Moreover, it underlines the importance of OGM and early parenting behaviour as potential predictors of future depression in non-clinical groups.

Correlated metals as transparent conductors.

The fundamental challenge for designing transparent conductors used in photovoltaics, displays and solid-state lighting is the ideal combination of high optical transparency and high electrical conductivity. Satisfying these competing demands is commonly achieved by increasing carrier concentration in a wide-bandgap semiconductor with low effective carrier mass through heavy doping, as in the case of tin-doped indium oxide (ITO). Here, an alternative design strategy for identifying high-conductivity, high-transparency metals is proposed, which relies on strong electron-electron interactions resulting in an enhancement in the carrier effective mass. This approach is experimentally verified using the correlated metals SrVO3 and CaVO3, which, despite their high carrier concentration (>2.2 × 10(22) cm(-3)), have low screened plasma energies (<1.33 eV), and demonstrate excellent performance when benchmarked against ITO. A method is outlined to rapidly identify other candidates among correlated metals, and strategies are proposed to further enhance their performance, thereby opening up new avenues to develop transparent conductors.

Parent-adolescent discrepancies in positive parenting and adolescent problem behaviors in Chinese families.

Based on the discrepancy-maladaptive hypothesis and general strain theory, in this study, we examined two key aspects: first, the mediating role of self-control in the relationship between parent-adolescent discrepancies in positive parenting and adolescent internalizing and externalizing problems, and second, variations in problem behavior among subgroups with different parent-adolescent dyads reporting patterns. The participants were 349 intact Chinese families, with parents as the primary caregivers and teenagers aged 15-18 years who are attending secondary vocational schools. The results revealed that adolescents generally perceived lower levels of caring and behavioral control than parents. Compared to behavioral control, discrepancies in perceived levels of caring had more significant predicting levels of internalizing and externalizing problems, and the relationship between discrepancies of caring and internalizing and externalizing problems was mediated by self-control. Latent profile analysis revealed three parent-adolescent responding patterns (subgroups); compared to the other subgroups, only the subgroup characterized by adolescents perceiving lower caring and behavioral control than parents exhibited higher levels of internalizing and externalizing problems. The findings of this study provide insights on how parent-adolescent discrepancies may lead to adolescent problem behaviors and highlight the importance of self-control as a mediating mechanism.

Proof of ssDNA degraded from dsDNA for ET recombination.

The widely used ET recombination requires an ssDNA product degraded by Rac phage protein E588 from dsDNA for strand invasion. However, proof of the ssDNA product is still elusive. The study provided three levels of proof sequentially. The probable ssDNAs degraded by E588 from the fluorescent plus-, minus-, or double-stranded dsDNA pET28a-xylanase exhibited a half fluorescence intensity of the corresponding dsDNAs, equivalent to the E588 degradation nucleotides half that of the total nucleotides degraded from the corresponding dsDNA. The ssDNA product degraded by E588 from the fluorescent minus-stranded dsDNA was confirmed by gradient gel-electrophoresis and two nuclease degradation reactions. Degraded by E588 from the dsDNA pET28a-xylanase that had a phosphorothioated plus-stranded 5'-terminus, the plus-stranded ssDNA product was separated via gel electrophoresis and recovered via a DNAclean kit. The recovered ssDNA product was proven to have intact 5'- and 3'-ends by DNA sequencing analysis. This study provides a solid foundation for the mechanism of ssDNA invasion.

Picture book reading on the development of preschoolers in rural areas of China: Effects on language, inhibition, and theory of mind.

Studies have shown that book reading intervention may scaffold children's language development. However, whether book reading interventions are equally effective for children's cognitive development in a Chinese rural school setting remains to be explored. We conducted a four-month book reading intervention to address these issues in rural Chinese areas. A total of three hundred twenty-one children aged between 2.56 and 6.47 years (M = 4.66 ages, SD = 0.80) were assigned to three groups as follows: (a) control group without donated picture books; (b) active reading control group with donated picture books; and (c) intervention group with a 4-month instructed picture book reading intervention. The findings indicate that the available books could produce significant positive changes in the development of receptive language (F (1,191) = 14.46, p < 0.01) and inhibitory control (F (1,190) = 7.64, p = 0.01) of rural children. However, a 4-month intervention was noneffective at boosting participants' performance on these tasks (F (1,203) = 0.07~2.73, p > 0.10). The results discussed the possible explanations, implications for behavioral intervention researchers, and suggestions for social service organizations or public institutions.

Hybrid vanadate waveguiding configurations for extreme optical confinement and efficient polarization management in the near-infrared.

Vanadate materials such as CaVO3 and SrVO3 were recently proposed as promising alternatives to their conventional transparent conducting oxide counterparts owing to the superior capability for simultaneous realization of high optical transparency and high electrical conductivity originating from strong electron-electron interactions. Here we show that, in addition to their remarkable optoelectronic properties as conducting materials, their incorporation into planar waveguiding configurations could enable outstanding optical performance that is otherwise difficult to achieve with conventional material building blocks, especially metals. Starting from the guided wave at a single CaVO3/dielectric interface, the unique dispersion relationship and propagation property of the fundamental mode are revealed and compared to the conventional surface plasmon polariton associated with a silver/dielectric planar configuration. The superior confinement capability and the unique modal attenuation of the CaVO3-based waveguiding platform are further demonstrated via investigating silicon-based hybrid guiding schemes integrated with a CaVO3 nanostructure. By leveraging the pronounced polarization dependent loss in the hybrid configuration, an ultra-compact TE-pass polarizer is numerically demonstrated at telecommunication wavelengths. This transformative design features a reduced footprint and enhanced optical performance when benchmarked against the current state-of-the-art in hybrid silicon polarizers. The combination of these vanadate materials with traditional waveguiding platforms thereby opens new avenues towards miniaturized functional integrated photonic devices, and potentially enables a variety of intriguing applications at the sub-diffraction-limited scale.

Modeling and in Situ Probing of Surface Reactions in Atomic Layer Deposition.

Atomic layer deposition (ALD) has matured into a preeminent thin film deposition technique by offering a highly scalable and economic route to integrate chemically dissimilar materials with excellent thickness control down to the subnanometer regime. Contrary to its extensive applications, a quantitative and comprehensive understanding of the reaction processes seems intangible. Complex and manifold reaction pathways are possible, which are strongly affected by the surface chemical state. Here, we report a combined modeling and experimental approach utilizing ReaxFF reactive force field simulation and in situ real-time spectroscopic ellipsometry to gain insights into the ALD process of Al2O3 from trimethylaluminum and water on hydrogenated and oxidized Ge(100) surfaces. We deciphered the origin for the different peculiarities during initial ALD cycles for the deposition on both surfaces. While the simulations predicted a nucleation delay for hydrogenated Ge(100), a self-cleaning effect was discovered on oxidized Ge(100) surfaces and resulted in an intermixed Al2O3/GeOx layer that effectively suppressed oxygen diffusion into Ge. In situ spectroscopic ellipsometry in combination with ex situ atomic force microscopy and X-ray photoelectron spectroscopy confirmed these simulation results. Electrical impedance characterizations evidenced the critical role of the intermixed Al2O3/GeOx layer to achieve electrically well-behaved dielectric/Ge interfaces with low interface trap density. The combined approach can be generalized to comprehend the deposition and reaction kinetics of other ALD precursors and surface chemistry, which offers a path toward a theory-aided rational design of ALD processes at a molecular level.

Wafer-scale growth of VO2 thin films using a combinatorial approach.

Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide electronics and their realization in commercial devices demands a wafer-scale growth approach for high-quality transition metal oxide thin films. Such a method requires excellent control over the transition metal valence state to avoid performance deterioration, which has been proved challenging. Here we present a scalable growth approach that enables a precise valence state control. By creating an oxygen activity gradient across the wafer, a continuous valence state library is established to directly identify the optimal growth condition. Single-crystalline VO2 thin films have been grown on wafer scale, exhibiting more than four orders of magnitude change in resistivity across the metal-to-insulator transition. It is demonstrated that 'electronic grade' transition metal oxide films can be realized on a large scale using a combinatorial growth approach, which can be extended to other multivalent oxide systems.

Electric control of magnetism at room temperature.

In the single-phase multiferroics, the coupling between electric polarization (P) and magnetization (M) would enable the magnetoelectric (ME) effect, namely M induced and modulated by E, and conversely P by H. Especially, the manipulation of magnetization by an electric field at room-temperature is of great importance in technological applications, such as new information storage technology, four-state logic device, magnetoelectric sensors, low-power magnetoelectric device and so on. Furthermore, it can reduce power consumption and realize device miniaturization, which is very useful for the practical applications. In an M-type hexaferrite SrCo(2)Ti(2)Fe(8)O(19), large magnetization and electric polarization were observed simultaneously at room-temperature. Moreover, large effect of electric field-controlled magnetization was observed even without magnetic bias field. These results illuminate a promising potential to apply in magnetoelectric devices at room temperature and imply plentiful physics behind them.