Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 20 de 38
Filtrar
1.
Nano Lett ; 24(8): 2537-2543, 2024 Feb 28.
Artigo em Inglês | MEDLINE | ID: mdl-38372692

RESUMO

Characterizing the microstructure of radiation- and chemical-sensitive lithium dendrites and its solid electrolyte interphase (SEI) is an important task when investigating the performance and reliability of lithium-ion batteries. Widely used methods, such as cryogenic high-resolution transmission electron microscopy as well as related spectroscopy, are able to reveal the local structure at nanometer and atomic scale; however, these methods are unable to show the distribution of various crystal phases along the dendrite in a large field of view. In this work, two types of four-dimensional electron microscopy diffractive imaging methods, i.e., scanning electron nanodiffraction (SEND) and scanning convergent beam electron diffraction (SCBED), are employed to show a new pathway on characterizing the sensitive lithium dendrite samples at room temperature and in a large field of view. Combining with the non-negative matrix factorization (NMF) algorithm, orientations of different lithium metal grains along the lithium dendrite as well as different lithium compounds in the SEI layer are clearly identified.

2.
J Microsc ; 295(3): 217-235, 2024 Sep.
Artigo em Inglês | MEDLINE | ID: mdl-38818951

RESUMO

The concept of electronic orbitals has enabled the understanding of a wide range of physical and chemical properties of solids through the definition of, for example, chemical bonding between atoms. In the transmission electron microscope, which is one of the most used and powerful analytical tools for high-spatial-resolution analysis of solids, the accessible quantity is the local distribution of electronic states. However, the interpretation of electronic state maps at atomic resolution in terms of electronic orbitals is far from obvious, not always possible, and often remains a major hurdle preventing a better understanding of the properties of the system of interest. In this review, the current state of the art of the experimental aspects for electronic state mapping and its interpretation as electronic orbitals is presented, considering approaches that rely on elastic and inelastic scattering, in real and reciprocal spaces. This work goes beyond resolving spectral variations between adjacent atomic columns, as it aims at providing deeper information about, for example, the spatial or momentum distributions of the states involved. The advantages and disadvantages of existing experimental approaches are discussed, while the challenges to overcome and future perspectives are explored in an effort to establish the current state of knowledge in this field. The aims of this review are also to foster the interest of the scientific community and to trigger a global effort to further enhance the current analytical capabilities of transmission electron microscopy for chemical bonding and electronic structure analysis.

3.
Angew Chem Int Ed Engl ; 62(7): e202216898, 2023 Feb 06.
Artigo em Inglês | MEDLINE | ID: mdl-36539374

RESUMO

Physical properties of materials are mainly determined by valence electron configurations, where different valence shells would induce divergent phenomena. In compounds containing Sc2+ , 3d electron occupancy is expected, the same as other transition metal atoms like Ti3+ . But this situation still awaits experimental verification in inorganic materials. Here, we selected ScS to measure the valence electron density and orbital population of Sc2+ through delicate quantitative convergent-beam electron diffraction. With the absence of 3d orbital features around Sc-atom sites and the nearly bare population of t2g orbital, the unintuitive occupation of 4s orbital in Sc2+ is concluded. It should be the first time to report such a special electron configuration in a transition metal compound, in which 4s rather than 3d orbital is preferred. Our findings reveal the distinct behavior of Sc and probable ways to modulate material properties by controlling electron orbitals.

4.
Small ; 18(18): e2107620, 2022 05.
Artigo em Inglês | MEDLINE | ID: mdl-35373528

RESUMO

By controlling the configuration of polymorphic phases in high-k Hf0.5 Zr0.5 O2 thin films, new functionalities such as persistent ferroelectricity at an extremely small scale can be exploited. To bolster the technological progress and fundamental understanding of phase stabilization (or transition) and switching behavior in the research area, efficient and reliable mapping of the crystal symmetry encompassing the whole scale of thin films is an urgent requisite. Atomic-scale observation with electron microscopy can provide decisive information for discriminating structures with similar symmetries. However, it often demands multiple/multiscale analysis for cross-validation with other techniques, such as X-ray diffraction, due to the limited range of observation. Herein, an efficient and automated methodology for large-scale mapping of the crystal symmetries in polycrystalline Hf0.5 Zr0.5 O2 thin films is developed using scanning probe-based diffraction and a hybrid deep convolutional neural network at a 2 nm2 resolution. The results for the doped hafnia films are fully proven to be compatible with atomic structures revealed by microscopy imaging, not requiring intensive human input for interpretation.


Assuntos
Aprendizado Profundo , Humanos , Difração de Raios X
5.
J Microsc ; 288(1): 10-15, 2022 Oct.
Artigo em Inglês | MEDLINE | ID: mdl-35916115

RESUMO

Convergent beam electron diffraction (CBED) was used to profile the thickness of aluminium alloys foils prepared by using the twinjet electropolishing method. The two-beam CBED condition was obtained by exciting the { 200 } $\{ {200} \}$ and { 111 } $\{ {111} \}$ aluminium diffracted g-vector. The aluminium alloy foil thicknesses were calculated at different distances from the sample hole edge. In areas where only one Kossel-Möllenstedt (K-M) minima fringe was obtained, the thickness was determined by matching the experimental with simulated convergent beam diffraction patterns. In areas far away from the sample edge, the thickness of foils was high enough to generate at least two (K-M) minima fringes, required for linear regression fitting.

6.
Proc Natl Acad Sci U S A ; 115(29): 7473-7478, 2018 07 17.
Artigo em Inglês | MEDLINE | ID: mdl-29970422

RESUMO

The van der Waals heterostructures, which explore the synergetic properties of 2D materials when assembled into 3D stacks, have already brought to life a number of exciting phenomena and electronic devices. Still, the interaction between the layers in such assembly, possible surface reconstruction, and intrinsic and extrinsic defects are very difficult to characterize by any method, because of the single-atomic nature of the crystals involved. Here we present a convergent beam electron holographic technique which allows imaging of the stacking order in such heterostructures. Based on the interference of electron waves scattered on different crystals in the stack, this approach allows one to reconstruct the relative rotation, stretching, and out-of-plane corrugation of the layers with atomic precision. Being holographic in nature, our approach allows extraction of quantitative information about the 3D structure of the typical defects from a single image covering thousands of square nanometers. Furthermore, qualitative information about the defects in the stack can be extracted from the convergent diffraction patterns even without reconstruction, simply by comparing the patterns in different diffraction spots. We expect that convergent beam electron holography will be widely used to study the properties of van der Waals heterostructures.

7.
Proc Natl Acad Sci U S A ; 111(15): 5491-6, 2014 Apr 15.
Artigo em Inglês | MEDLINE | ID: mdl-24706785

RESUMO

In materials, the nature of the strain-stress relationship, which is fundamental to their properties, is determined by both the linear and nonlinear elastic responses. Whereas the linear response can be measured by various techniques, the nonlinear behavior is nontrivial to probe and to reveal its nature. Here, we report the methodology of time-resolved Kikuchi diffraction for mapping the (non)linear elastic response of nanoscale graphite following an ultrafast, impulsive strain excitation. It is found that the longitudinal wave propagating along the c-axis exhibits echoes with a frequency of 9.1 GHz, which indicates the reflections of strain between the two surfaces of the material with a speed of ∼4 km/s. Because Kikuchi diffraction enables the probing of strain in the transverse direction, we also observed a higher-frequency mode at 75.5 GHz, which has a relatively long lifetime, on the order of milliseconds. The fluence dependence and the polarization properties of this nonlinear mode are entirely different from those of the linear, longitudinal mode, and here we suggest a localized breather motion in the a-b plane as the origin of the nonlinear shear dynamics. The approach presented in this contribution has the potential for a wide range of applications because most crystalline materials exhibit Kikuchi diffraction.


Assuntos
Grafite/química , Microscopia Eletrônica de Transmissão/métodos , Modelos Químicos , Nanoestruturas/química , Análise de Fourier , Teste de Materiais , Resistência ao Cisalhamento
8.
J Microsc ; 261(3): 243-8, 2016 Mar.
Artigo em Inglês | MEDLINE | ID: mdl-26457668

RESUMO

We investigate Ar ion-milling rates and Ga-ion induced damage on sample surfaces of Si and GaAs single crystals prepared by focused ion beam (FIB) method for transmission electron microscopy observation. The convergent beam electron diffraction technique with Bloch simulation is used to measure the thickness of the Ar-ion milled samples to calculate the milling rates of Si and GaAs single crystals. The measurement shows that an amorphous layer is formed on the sample surface and can be removed by further Ar-ion milling. In addition, the local symmetry breaking induced by FIB is investigated using quantitative symmetry measurement. The FIBed-GaAs sample shows local symmetry breaking after FIB milling, although the FIBed-Si sample has no considerable symmetry breaking.

9.
Proc Natl Acad Sci U S A ; 110(35): 14144-9, 2013 Aug 27.
Artigo em Inglês | MEDLINE | ID: mdl-23940343

RESUMO

A century has passed since Bragg solved the first atomic structure using diffraction. As with this first structure, all atomic structures to date have been deduced from the measurement of many diffracted intensities using iterative and statistical methods. We show that centrosymmetric atomic structures can be determined without the need to measure or even record a diffracted intensity. Instead, atomic structures can be determined directly and quickly from the observation of crystallographic phases in electron diffraction patterns. Furthermore, only a few phases are required to achieve high resolution. This represents a paradigm shift in structure determination methods, which we demonstrate with the moderately complex α-Al2O3. We show that the observation of just nine phases enables the location of all atoms with a resolution of better than 0.1 Å. This level of certainty previously required the measurement of thousands of diffracted intensities.

10.
Nano Lett ; 15(12): 7873-9, 2015 Dec 09.
Artigo em Inglês | MEDLINE | ID: mdl-26517289

RESUMO

We report the nanoscale quantification of strain in GaAs/GaAsP core-shell nanowires. By tracking the shifting of higher-order Laue zone (HOLZ) lines in convergent beam electron diffraction patterns, we observe unique variations in HOLZ line separation along different facets of the core-shell structure, demonstrating the nonuniform strain fields created by the heterointerface. Furthermore, through the use of continuum mechanical modeling and Bloch wave analysis we calculate expected HOLZ line shift behavior, which are directly matched to experimental results. This comparison demonstrates both the power of electron microscopy as a platform for nanoscale strain characterization and the reliability of continuum models to accurately calculate complex strain fields in nanoscale systems.

SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA