Electroluminescent Clusters.

Optoelectronic cluster materials emerge rapidly in recent years especially for light-emitting devices, owing to their 100 % exciton harvesting and unique organic-inorganic hybrid structures with tunable excited-state characteristics for thermally activated delayed fluorescence and/or phosphorescence and inheritable photo- and thermo-stability. However, for efficient electroluminescence, excited-state compositions of cluster emitters should be tuned through ligand engineering to enhance ligand-centered radiative components and reduce cluster-centered quenching states. Nonetheless, the balance of optoelectronic properties requires delicate and controllable ligand functionalization. On the other hand, in addition to balancing carrier fluxes, it showed that device engineering, especially host matrixes and interfacial optimization, can not only alleviate triplet quenching, but also modify processing and passivate defects. As consequence, the record external quantum efficiencies of cluster light-emitting diodes already reached ≈30 %. Herein, we overview recent progress of electroluminescent cluster materials and discuss their structure-property relationships, which would inspire the continuous efforts making cluster light-emitting diodes competent as the new generation of displays and lighting sources.

Exploring the Cutting-Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material-to-Device Engineering.

Advanced materials and device engineering has played a crucial role in improving the performance of electrochemical random access memory (ECRAM) devices. ECRAM technology has been identified as a promising candidate for implementing artificial synapses in neuromorphic computing systems due to its ability to store analog values and its ease of programmability. ECRAM devices consist of an electrolyte and a channel material sandwiched between two electrodes, and the performance of these devices depends on the properties of the materials used. This review provides a comprehensive overview of material engineering strategies to optimize the electrolyte and channel materials' ionic conductivity, stability, and ionic diffusivity to improve the performance and reliability of ECRAM devices. Device engineering and scaling strategies are further discussed to enhance ECRAM performance. Last, perspectives on the current challenges and future directions in developing ECRAM-based artificial synapses in neuromorphic computing systems are provided.

Long-Wavelength Light-Emitting Electrochemical Cells: Materials and Device Engineering.

Long-wavelength light-emitting electrochemical cells (LECs) are potential deep-red and near infrared light sources with solution-processable simple device architecture, low-voltage operation, and compatibility with inert metal electrodes. Many scientific efforts have been made to material design and device engineering of the long-wavelength LECs over the past two decades. The materials designed the for long-wavelength LECs cover ionic transition metal complexes, small molecules, conjugated polymers, and perovskites. On the other hand, device engineering techniques, including spectral modification by adjusting microcavity effect, light outcoupling enhancement, energy down-conversion from color conversion layers, and adjusting intermolecular interactions, are also helpful in improving the device performance of long-wavelength LECs. In this review, recent advances in the long-wavelength LECs are reviewed from the viewpoints of materials and device engineering. Finally, discussions on conclusion and outlook indicate possible directions for future developments of the long-wavelength LECs. This review would like to pave the way for the researchers to design materials and device engineering techniques for the long-wavelength LECs in the applications of displays, bio-imaging, telecommunication, and night-vision displays.

Materials, photophysics and device engineering of perovskite light-emitting diodes.

Here we provide a comprehensive review of a newly developed lighting technology based on metal halide perovskites (i.e. perovskite light-emitting diodes) encompassing the research endeavours into materials, photophysics and device engineering. At the outset we survey the basic perovskite structures and their various dimensions (namely three-, two- and zero-dimensional perovskites), and demonstrate how the compositional engineering of these structures affects the perovskite light-emitting properties. Next, we turn to the physics underpinning photo- and electroluminescence in these materials through their connection to the fundamental excited states, energy/charge transport processes and radiative and non-radiative decay mechanisms. In the remainder of the review, we focus on the engineering of perovskite light-emitting diodes, including the history of their development as well as an extensive analysis of contemporary strategies for boosting device performance. Key concepts include balancing the electron/hole injection, suppression of parasitic carrier losses, improvement of the photoluminescence quantum yield and enhancement of the light extraction. Overall, this review reflects the current paradigm for perovskite lighting, and is intended to serve as a foundation to materials and device scientists newly working in this field.

Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon.

Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here multiple strategies are demonstrated and integrated to manufacture scale-up donor-based quantum computers. 31PF2 molecule implants are used to triple the placement certainty compared to 31P ions, while attaining 99.99% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as 123Sb and 209Bi, which represent high-dimensional qudits for quantum information processing, while Sb2 molecules enable deterministic formation of closely-spaced qudits. The deterministic formation of regular arrays of donor atoms with 300 nm spacing is demonstrated, using step-and-repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor-based quantum computers in silicon.

Inhibition of Ion Migration for Highly Efficient and Stable Perovskite Solar Cells.

In recent years, organic-inorganic halide perovskites are now emerging as the most attractive alternatives for next-generation photovoltaic devices, due to their excellent optoelectronic characteristics and low manufacturing cost. However, the resultant perovskite solar cells (PVSCs) are intrinsically unstable owing to ion migration, which severely impedes performance enhancement, even with device encapsulation. There is no doubt that the investigation of ion migration and the summarization of recent advances in inhibition strategies are necessary to develop "state-of-the-art" PVSCs with high intrinsic stability for accelerated commercialization. This review systematically elaborates on the generation and fundamental mechanisms of ion migration in PVSCs, the impact of ion migration on hysteresis, phase segregation, and operational stability, and the characterizations for ion migration in PVSCs. Then, many related works on the strategies for inhibiting ion migration toward highly efficient and stable PVSCs are summarized. Finally, the perspectives on the current obstacles and prospective strategies for inhibition of ion migration in PVSCs to boost operational stability and meet all of the requirements for commercialization success are summarized.

Ultralong Carrier Lifetime Exceeding 20 µs in Lead Halide Perovskite Film Enable Efficient Solar Cells.

The carrier lifetime is one of the key parameters for perovskite solar cells (PSCs). However, it is still a great challenge to achieve long carrier lifetimes in perovskite films that are comparable with perovskite crystals owning to the large trap density resulting from the unavoidable defects in grain boundaries and surfaces. Here, by regulating the electronic structure with the developed 2-thiopheneformamidinium bromide (ThFABr) combined with the unique film structure of 2D perovskite layer caped 2D/3D polycrystalline perovskite film, an ultralong carrier lifetime exceeding 20 µs and carrier diffusion lengths longer than 6.5 µm are achieved. These excellent properties enable the ThFA-based devices to yield a champion efficiency of 24.69% with a minimum VOC loss of 0.33 V. The unencapsulated device retains ≈95% of its initial efficiency after 1180 h by max power point (MPP) tracking under continuous light illumination. This work provides important implications for structured 2D/(2D/3D) perovskite films combined with unique FA-based spacers to achieve ultralong carrier lifetime for high-performance PSCs and other optoelectronic applications.

Ion Migration in Perovskite Light-Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering.

In recent years, perovskite light-emitting diodes (PeLEDs) have emerged as a promising new lighting technology with high external quantum efficiency, color purity, and wavelength tunability, as well as, low-temperature processability. However, the operational stability of PeLEDs is still insufficient for their commercialization. The generation and migration of ionic species in metal halide perovskites has been widely acknowledged as the primary factor causing the performance degradation of PeLEDs. Herein, this topic is systematically discussed by considering the fundamental and engineering aspects of ion-related issues in PeLEDs, including the material and processing origins of ion generation, the mechanisms driving ion migration, characterization approaches for probing ion distributions, the effects of ion migration on device performance and stability, and strategies for ion management in PeLEDs. Finally, perspectives on remaining challenges and future opportunities are highlighted.

Experiential Learning in a Biomedical Device Engineering Course: Proposal Development and Raw Research Data-Based Assignments.

There is a need for novel teaching approaches to train biomedical engineers that are conversant across disciplines and have the technical skills to address interdisciplinary scientific and technological challenges. Here, we describe a graduate-level miniaturized biomedical device engineering course that has been taught over the last decade in in-person, remote, and hybrid formats. The course employs experiential learning components, including a proposal development and review that mimic the National Institutes of Health process and technical assignments that use raw research data to simulate a research experience. The effectiveness of the course was measured via pre-/post-course concept inventory surveys as well as course evaluations with targeted questions on the learning instruments. Statistical comparison of pre-/post-course survey scores suggests that the course was effective in students achieving the learning objectives, and comparison of relative increase in pre-/post-course survey scores across different instruction formats (i.e., in-person, remote, hybrid) showed minimal difference, suggesting that the teaching elements are readily transferrable to remote instruction. Supplementary Information: The online version contains supplementary material available at 10.1007/s43683-022-00094-z.

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms.

2D transition metal chalcogenide (TMDC) materials, such as MoS2 , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.

Long-Term Accuracy Enhancement of Binary Neural Networks Based on Optimized Three-Dimensional Memristor Array.

In embedded neuromorphic Internet of Things (IoT) systems, it is critical to improve the efficiency of neural network (NN) edge devices in inferring a pretrained NN. Meanwhile, in the paradigm of edge computing, device integration, data retention characteristics and power consumption are particularly important. In this paper, the self-selected device (SSD), which is the base cell for building the densest three-dimensional (3D) architecture, is used to store non-volatile weights in binary neural networks (BNN) for embedded NN applications. Considering that the prevailing issues in written data retention on the device can affect the energy efficiency of the system's operation, the data loss mechanism of the self-selected cell is elucidated. On this basis, we introduce an optimized method to retain oxygen ions and prevent their diffusion toward the switching layer by introducing a titanium interfacial layer. By using this optimization, the recombination probability of Vo and oxygen ions is reduced, effectively improving the retention characteristics of the device. The optimization effect is verified using a simulation after mapping the BNN weights to the 3D VRRAM array constructed by the SSD before and after optimization. The simulation results showed that the long-term recognition accuracy (greater than 105 s) of the pre-trained BNN was improved by 24% and that the energy consumption of the system during training can be reduced 25,000-fold while ensuring the same accuracy. This work provides high storage density and a non-volatile solution to meet the low power consumption and miniaturization requirements of embedded neuromorphic applications.

Progress in Stability of Organic Solar Cells.

The organic solar cell (OSC) is a promising emerging low-cost thin film photovoltaics technology. The power conversion efficiency (PCE) of OSCs has overpassed 16% for single junction and 17% for organic-organic tandem solar cells with the development of low bandgap organic materials synthesis and device processing technology. The main barrier of commercial use of OSCs is the poor stability of devices. Herein, the factors limiting the stability of OSCs are summarized. The limiting stability factors are oxygen, water, irradiation, heating, metastable morphology, diffusion of electrodes and buffer layers materials, and mechanical stress. The recent progress in strategies to increase the stability of OSCs is surveyed, such as material design, device engineering of active layers, employing inverted geometry, optimizing buffer layers, using stable electrodes and encapsulation materials. The International Summit on Organic Photovoltaic Stability guidelines are also discussed. The potential research strategies to achieve the required device stability and efficiency are highlighted, rendering possible pathways to facilitate the viable commercialization of OSCs.

Unveiling the Concentration-Dependent Grain Growth of Perovskite Films from One- and Two-Step Deposition Methods: Implications for Photovoltaic Application.

In order to achieve high-efficiency perovskite solar cells, understanding both the crystal structure and the optoelectronic properties of perovskite layers is of importance. This paper uses crystallization analysis and the modeling study of two different perovskite deposition methods (two- and one-step methods) and thereby shows that the one-step method embodies a film formation process that is dominated by crystal growth, while the dominant mechanism of the two-step procedure is nucleation. Our data based on experimental and theory shows that the one-step recipe is superior in terms of morphology control, and, hence, reproducibility, compared to the two-step recipe.