Asymmetric and parallel subgenome selection co-shape common carp domestication.

BACKGROUND: The common carp (Cyprinus carpio) might best represent the domesticated allopolyploid animals. Although subgenome divergence which is well-known to be a key to allopolyploid domestication has been comprehensively characterized in common carps, the link between genetic architecture underlying agronomic traits and subgenome divergence is unknown in the selective breeding of common carps globally. RESULTS: We utilized a comprehensive SNP dataset in 13 representative common carp strains worldwide to detect genome-wide genetic variations associated with scale reduction, vibrant skin color, and high growth rate in common carp domestication. We identified numerous novel candidate genes underlie the three agronomically most desirable traits in domesticated common carps, providing potential molecular targets for future genetic improvement in the selective breeding of common carps. We found that independently selective breeding of the same agronomic trait (e.g., fast growing) in common carp domestication could result from completely different genetic variations, indicating the potential advantage of allopolyploid in domestication. We observed that candidate genes associated with scale reduction, vibrant skin color, and/or high growth rate are repeatedly enriched in the immune system, suggesting that domestication of common carps was often accompanied by the disease resistance improvement. CONCLUSIONS: In common carp domestication, asymmetric subgenome selection is prevalent, while parallel subgenome selection occurs in selective breeding of common carps. This observation is not due to asymmetric gene retention/loss between subgenomes but might be better explained by reduced pleiotropy through transposable element-mediated expression divergence between ohnologs. Our results demonstrate that domestication benefits from polyploidy not only in plants but also in animals.

A Comprehensive Study of Aluminum Anodization in Transition Modes.

Anodization is a method to fabricate a tunable nanoporosity and thickness of alumina coating. This research is devoted to large-area hard anodization (HA), ultrahard anodization (UHA), and transitional modes. The phenomenon and challenges of UHA and the transition from HA are studied on large-area samples using linear-sweep voltammetry. The findings indicate that a uniform large-area thick coating can be achieved by utilizing pre-UHA modes. The study's results indicate that UHA leads only to coatings with non-uniform thickness in large-area anodization. The peculiarities of pre-UHA are studied using different temperatures (0, 5, 10, and 15 °C) and processing times (1, 2, 4, 6, and 12 h) in a 0.3 M oxalic acid electrolyte. The current study shows the possibility for the fast growth of thick nanoporous alumina up to 235 ± 4 µm for only 12 h.

Fast, Efficient Tailoring Growth of Nanocrystalline Diamond Films by Fine-Tuning of Gas-Phase Composition Using Microwave Plasma Chemical Vapor Deposition.

Nanocrystalline diamond (NCD) films are attractive for many applications due to their smooth surfaces while holding the properties of diamond. However, their growth rate is generally low using common Ar/CH4 with or without H2 chemistry and strongly dependent on the overall growth conditions using microwave plasma chemical vapor deposition (MPCVD). In this work, incorporating a small amount of N2 and O2 additives into CH4/H2 chemistry offered a much higher growth rate of NCD films, which is promising for some applications. Several novel series of experiments were designed and conducted to tailor the growth features of NCD films by fine-tuning of the gas-phase compositions with different amounts of nitrogen and oxygen addition into CH4/H2 gas mixtures. The influence of growth parameters, such as the absolute amount and their relative ratios of O2 and N2 additives; substrate temperature, which was adjusted by two ways and inferred by simulation; and microwave power on NCD formation, was investigated. Short and long deposition runs were carried out to study surface structural evolution with time under identical growth conditions. The morphology, crystalline and optical quality, orientation, and texture of the NCD samples were characterized and analyzed. A variety of NCD films of high average growth rates ranging from 2.1 µm/h up to 6.7 µm/h were successfully achieved by slightly adjusting the O2/CH4 amounts from 6.25% to 18.75%, while that of N2 was kept constant. The results clearly show that the beneficial use of fine-tuning of gas-phase compositions offers a simple and effective way to tailor the growth characteristics and physical properties of NCD films for optimizing the growth conditions to envisage some specific applications.

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy.

Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100-150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150-200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225-275 °C. At high substrate temperature (300-350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

High Volume-Per-Dose and Low Resistivity of Cobalt Nanowires Grown by Ga+ Focused Ion Beam Induced Deposition.

The growth of ferromagnetic nanostructures by means of focused-Ga+-beam-induced deposition (Ga+-FIBID) using the Co2(CO)8 precursor has been systematically investigated. The work aimed to obtain growth conditions allowing for the simultaneous occurrence of high growth speed, good lateral resolution, low electrical resistivity, and ferromagnetic behavior. As a first result, it has been found that the competition between deposition and milling that is produced by the Ga+ beam is a limiting factor. In our working conditions, with the maximum available precursor flux, the maximum deposit thickness has been found to be 65 nm. The obtained volumetric growth rate is at least 50 times higher than in the case of deposition by focused-electron-beam-induced deposition. The lateral resolution of the deposits can be as good as 50 nm while using Ga+-beam currents lower than 10 pA. The high metallic content of the as-grown deposits gives rise to a low electrical resistivity, within the range 20-40 µΩ·cm. Magnetic measurements confirm the ferromagnetic nature of the deposits at room temperature. In conclusion, the set of obtained results indicates that the growth of functional ferromagnetic nanostructures by Ga+-FIBID while using the Co2(CO)8 precursor is a viable and competitive technique when compared to related nanofabrication techniques.