Recent Progress in Development of Carbon-Nanotube-Based Photo-Thermoelectric Sensors and Their Applications in Ubiquitous Non-Destructive Inspections.

The photo-thermoelectric (PTE) effect in electronic materials effectively combines photo-absorption-induced local heating and associated thermoelectric conversion for uncooled and broadband photo-detection. In particular, this work comprehensively summarizes the operating mechanism of carbon nanotube (CNT)-film-based PTE sensors and ubiquitous non-destructive inspections realized by exploiting the material properties of CNT films. Formation of heterogeneous material junctions across the CNT-film-based PTE sensors, namely photo-detection interfaces, triggers the Seebeck effect with photo-absorption-induced local heating. Typical photo-detection interfaces include a channel-electrode boundary and a junction between P-type CNTs and N-type CNTs (PN junctions). While the original CNT film channel exhibits positive Seebeck coefficient values, the material selections of the counterpart freely govern the intensity and polarity of the PTE response signals. Based on these operating mechanisms, CNT film PTE sensors demonstrate a variety of physical and chemical non-destructive inspections. The device aggregates broad multi-spectral optical information regarding the targets and reconstructs their inner composite or layered structures. Arbitrary deformations of the device are attributed to the macroscopic flexibility of the CNT films to further monitor targets from omni-directional viewing angles without blind spots. Detection of blackbody radiation from targets using the device also visualizes their behaviors and associated changes.

Ultrasensitive and Self-Powered Terahertz Detection Driven by Nodal-Line Dirac Fermions and Van der Waals Architecture.

Terahertz detection has been highly sought to open a range of cutting-edge applications in biomedical, high-speed communications, astronomy, security screening, and military surveillance. Nonetheless, these ideal prospects are hindered by the difficulties in photodetection featuring self-powered operation at room temperature. Here, this challenge is addressed for the first time by synthesizing the high-quality ZrGeSe with extraordinary quantum properties of Dirac nodal-line semimetal. Benefiting from its high mobility and gapless nature, a metal-ZrGeSe-metal photodetector with broken mirror symmetry allows for a high-efficiency photoelectric conversion assisted by the photo-thermoelectric effect. The designed architecture features ultrahigh sensitivity, excellent ambient stability, and an efficient rectified signal even above 0.26 THz. Maximum responsivity larger than 0.11 A W-1 , response time of 8.3 µs, noise equivalent power (NEP) less than 0.15 nW Hz-1/2 , and demonstrative imaging application are all achieved. The superb performances with a lower dark current and NEP less than 15 pW Hz-1/2 are validated through integrating the van der Waals heterostructure. These results open up an appealing perspective to explore the nontrivial topology of Dirac nodal-line semimetal by devising the peculiar device geometry that allows for a novel roadmap to address targeted terahertz application requirements.

Enhanced Thermoelectric Performance of n-Type Organic Semiconductor via Electric Field Modulated Photo-Thermoelectric Effect.

Modulating photophysical processes is a fundamental way for tuning performance of many organic devices. However, it has not been explored as an effective strategy to manipulate the thermoelectric (TE) conversion of organic semiconductors (OSCs) owing to their critical requirement to carrier concentration (>1018 cm-3 ) and the fact of low exciton separation efficiency in single element OSCs. Here, an electric field modulated photo-thermoelectric (P-TE) effect in an n-type OSC is demonstrated to realize a significant improvement of TE performance. The electrical and spectroscopy characterizations reveal that the electric field gating generates combined modulation of exciton separation, charge screening, and carrier recombination, which produces a more than ten times improvement of photoinduced carrier concentration. These coupled processes contribute to the unconventional Seebeck coefficient (S)-electrical conductivity (σ) trade-off relationship of the photoexcited films, therefore leading to a more than 500% enhancement in the power factor for n-type OTE semiconductors. This work opens a unique way toward state-of-the-art organic P-TE materials for energy harvesting applications.