Step-bunching instability of growing interfaces between ice and supercooled water.

SignificanceStep-bunching instability (SBI) is one of the interfacial instabilities driven by self-organization of elementary step flow associated with crystal-growth dynamics, which has been observed in diverse crystalline materials. However, despite theoretical suggestions of its presence, no direct observations of SBI for simple melt growth have been achieved so far. Here, with the aid of a type of optical microscope and its combination with a two-beam interferometer, we realized quantitative in situ observations of the spatiotemporal dynamics of the SBI. This enables us to examine the origin of the SBI at the level of the step-step interaction. We also found that the SBI spontaneously induces a highly stable spiral growth mode, governing the late stage of the growth process.

Direct Observation of Large-Scale Screw Dislocation Grids in Oxide Heteroepitaxies.

Screw dislocation is important not only for understanding plastic deformation of crystals but also for optical and electrical properties of materials. However, characterizations of screw dislocations are still challenging since there is almost no atom distortion when viewed along the dislocation line. In particular, although it is theoretically known that shear strains in heteroepitaxy systems may be relaxed via screw dislocation grids, the specific structures and thickness-dependent evolutions of these grids are still largely unknown. Here, by using orthorhombic [001]-oriented DyScO3 substrates we have directly observed large-scale screw dislocation grids in the DyScO3/BiFeO3 oxide heteroepitaxies exhibiting large shear strain. Pure screw dislocations with a[100] and a[01̅0] Burgers vectors were confirmed by multiscale transmission electron microscopy study. Our results directly confirm screw dislocation grids as a factor to tailor shear strains in epitaxial systems and suggest a practical platform for studying structures and induced responses corresponding to screw dislocations.

Chemical Etching of Screw Dislocated Transition Metal Dichalcogenides.

Chemical etching can create novel structures inaccessible by growth and provide complementary understanding on the growth mechanisms of complex nanostructures. Screw dislocation-driven growth influences the layer stackings of transition metal dichalcogenides (MX2) resulting in complex spiral morphologies. Herein, we experimentally and theoretically study the etching of screw dislocated WS2 and WSe2 nanostructures using H2O2 etchant. The kinetic Wulff constructions and Monte Carlo simulations establish the etching principles of single MX2 layers. Atomic force microscopy characterization reveals diverse etching morphology evolution behaviors around the dislocation cores and along the exterior edges, including triangular, hexagonal, or truncated hexagonal holes and smooth or rough edges. These behaviors are influenced by the edge orientations, layer stackings, and the strain of screw dislocations. Ab initio calculation and kinetic Monte Carlo simulations support the experimental observations and provide further mechanistic insights. This knowledge can help one to understand more complex structures created by screw dislocations through etching.

Single-Handed Double Helix and Spiral Platelet Formed by Racemate of Dissymmetric Cages.

Spontaneous deracemization has been used to separate homochiral domains from the racemic system. However, homochirality can only be referred to when the scales of these domains and systems are specified. To clarify this, we report self-assembly of racemates of dissymmetric cages DC-1 with a cone-shape propeller geometry, forming a centrosymmetric columnar crystalline phase (racemic at crystallographic level). Owing to their anisotropic geometry, the two enantiomers are packed in a frustrated fashion in this crystalline phase; single-handed double helices are observed (single-handedness at supramolecular level). The frustrated packing (layer continuity break-up) in turn facilitates screw dislocation during the crystal growth, forming left- or right-handed spiral platelets (symmetry-breaking at morphological level), although each platelet is composed of DC-1 racemates. The symmetry correlation between DC-1 molecules, the crystalline phase and spiral platelets, all exhibit C3 symmetry.

Controllable Growth and Formation Mechanisms of Dislocated WS2 Spirals.

Two-dimensional (2D) layered metal dichalcogenides can form spiral nanostructures by a screw-dislocation-driven mechanism, which leads to changes in crystal symmetry and layer stackings that introduce attractive physical properties different from their bulk and few-layer nanostructures. However, controllable growth of spirals is challenging and their growth mechanisms are poorly understood. Here, we report the controllable growth of WS2 spiral nanoplates with different stackings by a vapor phase deposition route and investigate their formation mechanisms by combining atomic force microscopy with second harmonic generation imaging. Previously not observed "spiral arm" features could be explained as covered dislocation spiral steps, and the number of spiral arms correlates with the number of screw dislocations initiated at the bottom plane. The supersaturation-dependent growth can generate new screw dislocations from the existing layers, or even new layers templated by existing screw dislocations. Different number of dislocations and orientation of new layers result in distinct morphologies, different layer stackings, and more complex nanostructures, such as triangular spiral nanoplates with hexagonal spiral pattern on top. This work provides the understanding and control of dislocation-driven growth of 2D nanostructures. These spiral nanostructures offer diverse candidates for probing the physical properties of layered materials and exploring new applications in functional nanoelectronic and optoelectronic devices.

Homoepitaxy of Crystalline Rubrene Thin Films.

The smooth surface of crystalline rubrene films formed through an abrupt heating process provides a valuable platform to study organic homoepitaxy. By varying growth rate and substrate temperature, we are able to manipulate the onset of a transition from layer-by-layer to island growth modes, while the crystalline thin films maintain a remarkably smooth surface (less than 2.3 nm root-mean-square roughness) even with thick (80 nm) adlayers. We also uncover evidence of point and line defect formation in these films, indicating that homoepitaxy under our conditions is not at equilibrium or strain-free. Point defects that are resolved as screw dislocations can be eliminated under closer-to-equilibrium conditions, whereas we are not able to eliminate the formation of line defects within our experimental constraints at adlayer thicknesses above ∼25 nm. We are, however, able to eliminate these line defects by growing on a bulk single crystal of rubrene, indicating that the line defects are a result of strain built into the thin film template. We utilize electron backscatter diffraction, which is a first for organics, to investigate the origin of these line defects and find that they preferentially occur parallel to the (002) plane, which is in agreement with expectations based on calculated surface energies of various rubrene crystal facets. By combining the benefits of crystallinity, low surface roughness, and thickness-tunability, this system provides an important study of attributes valuable to high-performance organic electronic devices.

Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.

We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 °C, the 2DEG mobility and sheet carrier density were 1627 cm²/V·s and 3.23 × 10¹³ cm⁻², respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.

Solvothermally Synthesized Sb2Te3 Platelets Show Unexpected Optical Contrasts in Mid-Infrared Near-Field Scanning Microscopy.

We report nanoscale-resolved optical investigations on the local material properties of Sb2Te3 hexagonal platelets grown by solvothermal synthesis. Using mid-infrared near-field microscopy, we find a highly symmetric pattern, which is correlated to a growth spiral and which extends over the entire platelet. As the origin of the optical contrast, we identify domains with different densities of charge carriers. On Sb2Te3 samples grown by other means, we did not find a comparable domain structure.

Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles.

Monolayer molybdenum disulfide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related materials such as graphene) is hexagonal boron nitride (h-BN). Stacked heterostructures of MoS2 and h-BN have been produced by manual transfer methods, but a more efficient and scalable assembly method is needed. Here we demonstrate the direct growth of single- and few-layer MoS2 on h-BN by chemical vapor deposition (CVD) method, which is scalable with suitably structured substrates. The growth mechanisms for single-layer and few-layer samples are found to be distinct, and for single-layer samples low relative rotation angles (<5°) between the MoS2 and h-BN lattices prevail. Moreover, MoS2 directly grown on h-BN maintains its intrinsic 1.89 eV bandgap. Our CVD synthesis method presents an important advancement toward controllable and scalable MoS2-based electronic devices.

Controlled synthesis of layered double hydroxide nanoplates driven by screw dislocations.

Layered double hydroxides (LDHs) are a family of two-dimensional (2D) materials with layered crystal structures that have found many applications. Common strategies to synthesize LDHs lead to a wide variety of morphologies, from discrete 2D nanosheets to nanoflowers. Here, we report a study of carefully controlled LDH nanoplate syntheses using zinc aluminum (ZnAl) and cobalt aluminum (CoAl) LDHs as examples and reveal their crystal growth to be driven by screw dislocations. By controlling and maintaining a low precursor supersaturation using a continuous flow reactor, individual LDH nanoplates with well-defined morphologies were synthesized on alumina-coated substrates, instead of the nanoflowers that result from uncontrolled overgrowth. The dislocation-driven growth was further established for LDH nanoplates directly synthesized using the respective metal salt precursors. Atomic force microscopy revealed screw dislocation growth spirals, and under transmission electron microscopy, thin CoAl LDH nanoplates displayed complex contrast contours indicative of strong lattice strain caused by dislocations. These results suggest the dislocation-driven mechanism is generally responsible for the growth of 2D LDH nanostructures, and likely other materials with layered crystal structures, which could help the rational synthesis of well-defined 2D nanomaterials with improved properties.

Intrinsic Chirality of CdSe/ZnS Quantum Dots and Quantum Rods.

A new class of chiral nanoparticles is of great interest not only for nanotechnology, but also for many other fields of scientific endeavor. Normally the chirality in semiconductor nanocrystals is induced by the initial presence of chiral ligands/stabilizer molecules. Here we report intrinsic chirality of ZnS coated CdSe quantum dots (QDs) and quantum rods (QRs) stabilized by achiral ligands. As-prepared ensembles of these nanocrystals have been found to be a racemic mixture of d- and l-nanocrystals which also includes a portion of nonchiral nanocrystals and so in total the solution does not show a circular dichroism (CD) signal. We have developed a new enantioselective phase transfer technique to separate chiral nanocrystals using an appropriate chiral ligand and obtain optically active ensembles of CdSe/ZnS QDs and QRs. After enantioselective phase transfer, the nanocrystals isolated in organic phase, still capped with achiral ligands, now display circular dichroism (CD). We propose that the intrinsic chirality of CdSe/ZnS nanocrystals is caused by the presence of naturally occurring chiral defects.

Three-dimensional spirals of atomic layered MoS2.

Atomically thin two-dimensional (2D) layered materials, including graphene, boron nitride, and transition metal dichalcogenides (TMDs), can exhibit novel phenomena distinct from their bulk counterparts and hold great promise for novel electronic and optoelectronic applications. Controlled growth of such 2D materials with different thickness, composition, and symmetry are of central importance to realize their potential. In particular, the ability to control the symmetry of TMD layers is highly desirable because breaking the inversion symmetry can lead to intriguing valley physics, nonlinear optical properties, and piezoelectric responses. Here we report the first chemical vapor deposition (CVD) growth of spirals of layered MoS2 with atomically thin helical periodicity, which exhibits a chiral structure and breaks the three-dimensional (3D) inversion symmetry explicitly. The spirals composed of tens of connected MoS2 layers with decreasing areas: each basal plane has a triangular shape and shrinks gradually to the summit when spiraling up. All the layers in the spiral assume an AA lattice stacking, which is in contrast to the centrosymmetric AB stacking in natural MoS2 crystals. We show that the noncentrosymmetric MoS2 spiral leads to a strong bulk second-order optical nonlinearity. In addition, we found that the growth of spirals involves a dislocation mechanism, which can be generally applicable to other 2D TMD materials.

Screw-dislocation-driven bidirectional spiral growth of Bi2Se3 nanoplates.

Bi2Se3 attracts intensive attention as a typical thermoelectric material and a promising topological insulator material. However, previously reported Bi2Se3 nanostructures are limited to nanoribbons and smooth nanoplates. Herein, we report the synthesis of spiral Bi2Se3 nanoplates and their screw-dislocation-driven (SDD) bidirectional growth process. Typical products showed a bipyramid-like shape with two sets of centrosymmetric helical fringes on the top and bottom faces. Other evidence for the unique structure and growth mode include herringbone contours, spiral arms, and hollow cores. Through the manipulation of kinetic factors, including the precursor concentration, the pH value, and the amount of reductant, we were able to tune the supersaturation in the regime of SDD to layer-by-layer growth. Nanoplates with preliminary dislocations were discovered in samples with an appropriate supersaturation value and employed for investigation of the SDD growth process.

PVD growth of spiral pyramid-shaped WS2 on SiO2/Si driven by screw dislocations.

Atomically thin layered transition metal dichalcogenides (TMDs), such as MoS2 and WS2, have been getting much attention recently due to their interesting electronic and optoelectronic properties. Especially, spiral TMDs provide a variety of candidates for examining the light-matter interaction resulting from the broken inversion symmetry, as well as the potential new utilization in functional optoelectronic, electromagnetic and nanoelectronics devices. To realize their potential device applications, it is desirable to achieve controlled growth of these layered nanomaterials with a tunable stacking. Here, we demonstrate the Physical Vapor Deposition (PVD) growth of spiral pyramid-shaped WS2 with ∼200  µ m in size and the interesting optical properties via AFM and Raman spectroscopy. By controlling the precursors concentration and changing the initial nucleation rates in PVD growth, WS2 in different nanoarchitectures can be obtained. We discuss the growth mechanism for these spiral-patterned WS2 nanostructures based on the screw dislocations. This study provides a simple, scalable approach of screw dislocation-driven (SDD) growth of distinct TMD nanostructures with varying morphologies, and stacking.

Advanced processing of differential phase contrast data: Distinction between different causes of electron phase shifts.

Differential phase contrast, in its high resolution modification also known as first moment microscopy or momentum resolved STEM [1-7] , basically measures the lateral momentum transfer to the electron probe due to the beam interaction with either electrostatic and/or magnetic fields, when the probe transmits the specimen. In other words, the result of the measurement is a vector field p→(x,y) which describes the lateral momentum transfer to the probe electrons. In the case of electric fields, this momentum transfer is easily converted to the electric field E→(x,y) causing the deflection, and from ϱ=ɛ0∇⋅E→ the local charge density can be calculated from the divergence of the electric field. However, from experimental data it is known that also the calculation of the vector field's curl ∇→×p→ in general yields non-zero results. In this paper, we use the Helmholtz decomposition (Wikipedia contributors, 2022), also known as the fundamental theorem of vector calculus, to split the measured vector fields into their curl-free and divergence-free components and to interpret the physical meaning of these components in detail. It will be shown, that non-zero curl components may be used to measure geometric phases occurring from irregularities in crystal structure such as a screw dislocation.

Tannic acid- and cation-mediated interfacial self-assembly and epitaxial growth of fullerene (nC60) and kaolinite binary graphitic aggregates.

In this study, we investigated the tannic acid (TA)-, Ca2+-, and mica-enabled interfacial assembly of nC60 fullerene (FWS) and Na-saturated kaolinite (Na-Kl) with in and ex situ atomic force microscopy (AFM). The epitaxial growth of herringbone motif, two dimensional (2D) chiral clusters and 3D mounds were detected. π-π electron donor-acceptor (EDA) interactions drove the transformation of the FWS, and the symmetry of the muscovite substrate directed the epitaxial ordering of self-assembled herringbone motifs. A ternary mixture of Na-Kl/FWS/TA in the presence of Ca2+ produced double-stranded (ds) helices and 2D platelets of chiral clusters with a nano-porous monolayer on K+-treated muscovite surfaces. The weak hydration of exchangeable K+ and stronger electric fields possibly contributed to the 1D and 2D propagation of aggregates. However, the local increment in carbon content due to the nucleation of functionalized FWS on mica diminished the K+-induced electric field effect and facilitated the 3D growth of helical mounds. The diffusion limited mass-transfer of particulates across the Ehrlich-Schwoebel barrier (ESB) and screw dislocation assisted motion of particulates specifically at higher steps aided mound growth. Thus, the structural incorporation of FWS can substantially impede its interfacial transport and produce hierarchical hybrid mineral-enriched graphitic aggregates.

Uncovering the action of ethanol controlled crystallization of 3,4-bis(3-nitrofurazan-4-yl)furoxan crystal: A molecular dynamics study.

A computational strategy in consideration of attachment energy, temperature, solubility and supersaturation unravels details of the solvent effect on the crystal morphology. The crystal morphologies were predicted by the advanced screw dislocation growth model. This research sheds much light on the crystal growth mechanisms with the example of 3,4-bis(3-nitrofurazan-4-yl)furoxan (DNTF) in ethanol. The solvation model based on the experiment situation was established into periodic supercell. Molecular dynamics simulation was performed for obtaining the adsorption energy at the equilibrium state of the interface layer. The growth characteristics of relevant growth faces are introduced. At the same time, a periodic bond chains analysis can be applied to the existence and evolution of crystal growth units. The prediction results are in remarkable agreement with the experimental results. We found that crystal morphology of DNTF is composed of (002), (111), (111¯) and (101) faces in ethanol. As the saturation temperature rises, the (101) face becomes smaller and eventually disappears.

Engineering Single Nanopores on Gold Nanoplates by Tuning Crystal Screw Dislocation.

Compared with the large variety of solid gold nanostructures, synthetic approaches for their hollow counterparts are limited, largely confined to chemical and irradiation-based etching of preformed nanostructures. In particular, the preparation of through nanopore structures is extremely challenging. Here, a unique strategy for direct synthesis of gold nanopores in solution without the need for sacrificial templates or postsynthesis processing is reported. By controlling the degree of crystal screw dislocation, a single through pore with diameter ranging from sub-nanometer to tens of nanometers, in the center of large gold nanoplates, can be engineered with precision. Ionic current rectification behaviors are observed using the gold nanopore, potentially enabling new capabilities in biosensing, sequencing, and imaging.

Elastodynamic image forces on screw dislocations in the presence of phase boundaries.

The elastodynamic image forces acting on straight screw dislocations in the presence of planar phase boundaries are derived. Two separate dislocations are studied: (i) the injected, non-moving screw dislocation and (ii) the injected (or pre-existing), generally non-uniformly moving screw dislocation. The image forces are derived for both the case of a rigid surface and of a planar interface between two homogeneous, isotropic phases. The case of a rigid interface is shown to be solvable employing Head's image dislocation construction. The case of the elastodynamic image force due to an interface is solved by deriving the reflected wave's contribution to the global solution across the interface. This entails obtaining the fundamental solution (Green's function) for a point unit force via Cagniard's method, and then applying the convolution theorem for a screw dislocation modelled as a force distribution. Complete, explicit formulae are provided when available. It is shown that the elastodynamic image forces are generally affected by retardation effects, and that those acting on the moving dislocations display a dynamic magnification that exceed the attraction (or repulsion) predicted in classical elastostatic calculations.

Cu6Sn5 Whiskers Precipitated in Sn3.0Ag0.5Cu/Cu Interconnection in Concentrator Silicon Solar Cells Solder Layer.

Cu6Sn5 whiskers precipitated in Sn3.0Ag0.5Cu/Cu interconnection in concentrator silicon solar cells solder layer were found and investigated after reflow soldering and during aging. Ag3Sn fibers can be observed around Cu6Sn5 whiskers in the matrix microstructure, which can play an active effect on the reliability of interconnection. Different morphologies of Cu6Sn5 whiskers can be observed, and hexagonal rod structure is the main morphology of Cu6Sn5 whiskers. A hollow structure can be observed in hexagonal Cu6Sn5 whiskers, and a screw dislocation mechanism was used to represent the Cu6Sn5 growth. Based on mechanical property testing and finite element simulation, Cu6Sn5 whiskers were regarded as having a negative effect on the durability of Sn3.0Ag0.5Cu/Cu interconnection in concentrator silicon solar cells solder layer.