Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111). | J Phys Condens Matter;23(33): 334211, 2011 Aug 24. | MEDLINE

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Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111).

Zhang, K H L; Lazarov, V K; Veal, T D; Oropeza, F E; McConville, C F; Egdell, R G; Walsh, A.

Affiliation

Zhang KH; Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford OX1 3TA, UK.

J Phys Condens Matter ; 23(33): 334211, 2011 Aug 24.

Article in En | MEDLINE | ID: mdl-21813945

Subject(s)

Indium/chemistry; Zirconium/chemistry; Computers, Molecular; Crystallization; Materials Testing; Microscopy, Electron, Transmission; Surface Properties

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Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Zirconium / Indium Language: En Journal: J Phys Condens Matter Journal subject: BIOFISICA Year: 2011 Type: Article Affiliation country: United kingdom

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Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Zirconium / Indium Language: En Journal: J Phys Condens Matter Journal subject: BIOFISICA Year: 2011 Type: Article Affiliation country: United kingdom