Your browser doesn't support javascript.
loading
Memristive and neuromorphic behavior in a Li(x)CoO2 nanobattery.
Mai, V H; Moradpour, A; Senzier, P Auban; Pasquier, C; Wang, K; Rozenberg, M J; Giapintzakis, J; Mihailescu, C N; Orfanidou, C M; Svoukis, E; Breza, A; Lioutas, Ch B; Franger, S; Revcolevschi, A; Maroutian, T; Lecoeur, P; Aubert, P; Agnus, G; Salot, R; Albouy, P A; Weil, R; Alamarguy, D; March, K; Jomard, F; Chrétien, P; Schneegans, O.
Affiliation
  • Mai VH; 1] Laboratoire de Génie Électrique de Paris, CNRS-UMR 8507, Universités UPMC et Paris-Sud, Supélec, F-91192 Gif-sur-Yvette, France [2] Institut d'Électronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France.
  • Moradpour A; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France.
  • Senzier PA; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France.
  • Pasquier C; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France.
  • Wang K; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France.
  • Rozenberg MJ; 1] Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France [2] Departamento de Física Juan José Giambiagi, FCEN, Universidad de Buenos Aires, Ciudad Universitaria, Pabellón I, (1428) Buenos Aires, Argentina.
  • Giapintzakis J; Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus.
  • Mihailescu CN; Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus.
  • Orfanidou CM; Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus.
  • Svoukis E; Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus.
  • Breza A; 1] Nanotechnology Research Center and Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus [2] Physics Department, Aristotle University of Thessaloniki, GR-54124, Thessaloniki, Greece.
  • Lioutas ChB; Physics Department, Aristotle University of Thessaloniki, GR-54124, Thessaloniki, Greece.
  • Franger S; Laboratoire de Physico-Chimie de l'Etat Solide, CNRS-UMR 8182, Université Paris-Sud, F-91405 Orsay, France.
  • Revcolevschi A; Laboratoire de Physico-Chimie de l'Etat Solide, CNRS-UMR 8182, Université Paris-Sud, F-91405 Orsay, France.
  • Maroutian T; Institut d'Électronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France.
  • Lecoeur P; Institut d'Électronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France.
  • Aubert P; Institut d'Électronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France.
  • Agnus G; Institut d'Électronique Fondamentale, CNRS-UMR 8622, Université Paris-Sud, 91405 Orsay, France.
  • Salot R; Liten-CEA de Grenoble, F-38054 Grenoble, France.
  • Albouy PA; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France.
  • Weil R; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France.
  • Alamarguy D; Laboratoire de Génie Électrique de Paris, CNRS-UMR 8507, Universités UPMC et Paris-Sud, Supélec, F-91192 Gif-sur-Yvette, France.
  • March K; Laboratoire de Physique des Solides, CNRS-UMR 8502, Université Paris-Sud, F-91405 Orsay, France.
  • Jomard F; Groupe d'Etude de la Matière Condensée, CNRS-UMR 8635, Université de Versailles Saint-Quentin-En-Yvelines, F-78035 Versailles, France.
  • Chrétien P; Laboratoire de Génie Électrique de Paris, CNRS-UMR 8507, Universités UPMC et Paris-Sud, Supélec, F-91192 Gif-sur-Yvette, France.
  • Schneegans O; Laboratoire de Génie Électrique de Paris, CNRS-UMR 8507, Universités UPMC et Paris-Sud, Supélec, F-91192 Gif-sur-Yvette, France.
Sci Rep ; 5: 7761, 2015 Jan 14.
Article in En | MEDLINE | ID: mdl-25585693
ABSTRACT
The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of Li(x)CoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Sci Rep Year: 2015 Type: Article Affiliation country: France

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: Sci Rep Year: 2015 Type: Article Affiliation country: France