Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors. | Opt Express;22 Suppl 6: A1589-95, 2014 Oct 20. | MEDLINE

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Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min.

Opt Express ; 22 Suppl 6: A1589-95, 2014 Oct 20.

Article in En | MEDLINE | ID: mdl-25607316

Subject(s)

Gallium/chemistry; Lighting/instrumentation; Photometry/instrumentation; Surface Plasmon Resonance/instrumentation; Transistors, Electronic; Equipment Design; Equipment Failure Analysis; Gallium/radiation effects; Light; Scattering, Radiation; Systems Integration

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Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Photometry / Transistors, Electronic / Lighting / Surface Plasmon Resonance / Gallium Language: En Journal: Opt Express Journal subject: OFTALMOLOGIA Year: 2014 Type: Article

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Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Photometry / Transistors, Electronic / Lighting / Surface Plasmon Resonance / Gallium Language: En Journal: Opt Express Journal subject: OFTALMOLOGIA Year: 2014 Type: Article