Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: reply.
Opt Express
; 26(2): A110, 2018 Jan 22.
Article
in En
| MEDLINE
| ID: mdl-29401900
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Opt Express
Journal subject:
OFTALMOLOGIA
Year:
2018
Type:
Article