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A termination-insensitive and robust electron gas at the heterointerface of two complex oxides.
Zhang, Meng; Du, Kai; Ren, Tianshuang; Tian, He; Zhang, Ze; Hwang, Harold Y; Xie, Yanwu.
Affiliation
  • Zhang M; Interdisciplinary Center of Quantum Information, Zhejiang Province Key Laboratory of Quantum Technology and Device, and Department of Physics, Zhejiang University, 310027, Hangzhou, China.
  • Du K; Center of Electron Microscopy, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China.
  • Ren T; Interdisciplinary Center of Quantum Information, Zhejiang Province Key Laboratory of Quantum Technology and Device, and Department of Physics, Zhejiang University, 310027, Hangzhou, China.
  • Tian H; Center of Electron Microscopy, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China. hetian@zju.edu.cn.
  • Zhang Z; Center of Electron Microscopy, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China.
  • Hwang HY; Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA.
  • Xie Y; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA.
Nat Commun ; 10(1): 4026, 2019 Sep 06.
Article in En | MEDLINE | ID: mdl-31492862
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Commun Journal subject: BIOLOGIA / CIENCIA Year: 2019 Type: Article Affiliation country: China
Fulltext
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PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nat Commun Journal subject: BIOLOGIA / CIENCIA Year: 2019 Type: Article Affiliation country: China