A T-shaped gate tunneling field effect transistor with negative capacitance, super-steep subthreshold swing.

Li, Wei; Jia, Qingrui; Pan, Yumei; Chen, Xi'an; Yin, Yue; Wu, Yupan; Wang, Yucheng; Wen, Yi; Wang, Chao; Wang, Shaoxi.

Affiliation

Li W; Northwestern Polytechnical University, School of Microelectronics, Xi'an, People's Republic of China.
Jia Q; Northwestern Polytechnical University, School of Microelectronics, Xi'an, People's Republic of China.
Pan Y; Northwestern Polytechnical University, School of Microelectronics, Xi'an, People's Republic of China.
Chen X; Northwestern Polytechnical University, School of Microelectronics, Xi'an, People's Republic of China.
Yin Y; Northwestern Polytechnical University, School of Microelectronics, Xi'an, People's Republic of China.
Wu Y; Northwestern Polytechnical University, School of Microelectronics, Xi'an, People's Republic of China.
Wang Y; Northwestern Polytechnical University, School of Microelectronics, Xi'an, People's Republic of China.
Wen Y; Beijing Research Institute of Aerospace System Engineering, Beijing, People's Republic of China.
Wang C; Microelectronics Technology Institute, Xi'an, People's Republic of China.
Wang S; Northwestern Polytechnical University, School of Microelectronics, Xi'an, People's Republic of China.