Impacts of HfZrO thickness and anneal temperature on performance of MoS<sub>2</sub>negative-capacitance field-effect transistors.

Impacts of HfZrO thickness and anneal temperature on performance of MoS₂negative-capacitance field-effect transistors.

Tao, Xinge; Liu, Lu; Yang, Lei; Xu, Jing-Ping.

Affiliation

Tao X; School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Liu L; School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Yang L; School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Xu JP; School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

Nanotechnology ; 32(44)2021 Aug 13.

Article in En | MEDLINE | ID: mdl-34330115