High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer.
Nanomaterials (Basel)
; 12(4)2022 Feb 14.
Article
in En
| MEDLINE
| ID: mdl-35214971
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanomaterials (Basel)
Year:
2022
Type:
Article