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High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer.
Im, Ki-Sik; Mallem, Siva Pratap Reddy; Choi, Jin-Seok; Hwang, Young-Min; Roh, Jae-Seung; An, Sung-Jin; Lee, Jae-Hoon.
Affiliation
  • Im KS; Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Korea.
  • Mallem SPR; School of Materials Science and Engineering, Kyungpook National University, Daegu 41566, Korea.
  • Choi JS; Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea.
  • Hwang YM; Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Korea.
  • Roh JS; Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea.
  • An SJ; Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea.
  • Lee JH; Yield Enhancement Team, Foundry, Samsung Electronics Company Ltd., Pyeongtaek 17789, Korea.
Nanomaterials (Basel) ; 12(4)2022 Feb 14.
Article in En | MEDLINE | ID: mdl-35214971
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2022 Type: Article
Fulltext
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PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2022 Type: Article