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High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts.
Kim, Kwan-Ho; Andreev, Maksim; Choi, Soodon; Shim, Jaewoo; Ahn, Hogeun; Lynch, Jason; Lee, Taeran; Lee, Jaehyeong; Nazif, Koosha Nassiri; Kumar, Aravindh; Kumar, Pawan; Choo, Hyongsuk; Jariwala, Deep; Saraswat, Krishna C; Park, Jin-Hong.
Affiliation
  • Kim KH; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Andreev M; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
  • Choi S; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Shim J; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Ahn H; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Lynch J; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Lee T; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
  • Lee J; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Nazif KN; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Kumar A; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
  • Kumar P; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
  • Choo H; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
  • Jariwala D; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
  • Saraswat KC; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
  • Park JH; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
ACS Nano ; 16(6): 8827-8836, 2022 Jun 28.
Article in En | MEDLINE | ID: mdl-35435652

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2022 Type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2022 Type: Article