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Tailoring Interlayer Chiral Exchange by Azimuthal Symmetry Engineering.
Huang, Yu-Hao; Han, Jui-Hsu; Liao, Wei-Bang; Hu, Chen-Yu; Liu, Yan-Ting; Pai, Chi-Feng.
Affiliation
  • Huang YH; Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan.
  • Han JH; Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan.
  • Liao WB; Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan.
  • Hu CY; Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan.
  • Liu YT; Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan.
  • Pai CF; Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan.
Nano Lett ; 24(2): 649-656, 2024 Jan 17.
Article in En | MEDLINE | ID: mdl-38165119
ABSTRACT
Recent theoretical and experimental studies of the interlayer Dzyaloshinskii-Moriya interaction (DMI) have sparked great interest in its implementation into practical magnetic random-access memory (MRAM) devices, due to its capability to mediate long-range chiral spin textures. So far, experimental reports focused on the observation of interlayer DMI, leaving the development of strategies to control interlayer DMI's magnitude unaddressed. Here, we introduce an azimuthal symmetry engineering protocol capable of additive/subtractive tuning of interlayer DMI through the control of wedge deposition of separate layers and demonstrate its capability to mediate field-free spin-orbit torque (SOT) magnetization switching in both orthogonally magnetized and synthetic antiferromagnetically coupled systems. Furthermore, we showcase that the spatial inhomogeneity brought about by wedge deposition can be suppressed by specific azimuthal engineering design, ideal for practical implementation. Our findings provide guidelines for effective manipulations of interlayer DMI strength, beneficial for the future design of SOT-MRAM or other spintronic devices utilizing interlayer DMI.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Guideline Language: En Journal: Nano Lett Year: 2024 Type: Article Affiliation country: Taiwan

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Guideline Language: En Journal: Nano Lett Year: 2024 Type: Article Affiliation country: Taiwan