Angular dependence of domain wall resistivity in artificial magnetic domain structures.
Phys Rev Lett
; 97(20): 206602, 2006 Nov 17.
Article
en En
| MEDLINE
| ID: mdl-17155700
ABSTRACT
We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho downward arrow/rho upward arrow approximately 5.5, in good agreement with thin film band structure calculations.
Buscar en Google
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2006
Tipo del documento:
Article
País de afiliación:
Reino Unido