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Unlocking diamond's potential as an electronic material.
Balmer, R S; Friel, I; Woollard, S M; Wort, C J H; Scarsbrook, G A; Coe, S E; El-Hajj, H; Kaiser, A; Denisenko, A; Kohn, E; Isberg, J.
Afiliación
  • Balmer RS; Element Six Ltd., King's Ride Park, Ascot, Berkshire, UK.
Philos Trans A Math Phys Eng Sci ; 366(1863): 251-65, 2008 Jan 28.
Article en En | MEDLINE | ID: mdl-18024362
ABSTRACT
In this paper, we review the suitability of diamond as a semiconductor material for high-performance electronic applications. The current status of the manufacture of synthetic diamond is reviewed and assessed. In particular, we consider the quality of intrinsic material now available and the challenges in making doped structures suitable for practical devices. Two practical applications are considered in detail. First, the development of high-voltage switches capable of switching voltages in excess of 10 kV. Second, the development of diamond MESFETs for high-frequency and high-power applications. Here device data are reported showing a current density of more than 30 mA mm(-1) along with small-signal RF measurements demonstrating gigahertz operation. We conclude by considering the remaining challenges which will need to be overcome if commercially attractive diamond electronic devices are to be manufactured.
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Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Philos Trans A Math Phys Eng Sci Asunto de la revista: BIOFISICA / ENGENHARIA BIOMEDICA Año: 2008 Tipo del documento: Article País de afiliación: Reino Unido
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Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Philos Trans A Math Phys Eng Sci Asunto de la revista: BIOFISICA / ENGENHARIA BIOMEDICA Año: 2008 Tipo del documento: Article País de afiliación: Reino Unido