Bernas ion source discharge simulation.
Rev Sci Instrum
; 79(2 Pt 2): 02B313, 2008 Feb.
Article
en En
| MEDLINE
| ID: mdl-18315179
ABSTRACT
As the technology and applications continue to grow up, the development of plasma and ion sources with clearly specified characteristic is required. Therefore comprehensive numerical studies at the project stage are the key point for ion implantation source manufacturing (especially for low energy implantation). Recently the most commonly encountered numerical approach is the Monte Carlo particle-in-cell (MCPIC) method also known as particle-in-cell method with Monte Carlo collisions. In ITEP the 2D3V numerical code PICSIS-2D realizing MCPIC method was developed in the framework of the joint research program. We present first results of the simulation for several materials interested in semiconductors. These results are compared with experimental data obtained at the ITEP ion source test bench.
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Colección:
01-internacional
Banco de datos:
MEDLINE
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En
Revista:
Rev Sci Instrum
Año:
2008
Tipo del documento:
Article
País de afiliación:
Rusia