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Breaking AB stacking order in graphite oxide: ab initio approach.
Duong, Dinh Loc; Kim, Gunn; Jeong, Hae-Kyung; Lee, Young Hee.
Afiliación
  • Duong DL; Department of Physics, Department of Energy Science, Sungkyunkwan Advanced Institute of Nanotechnology, Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University, Suwon 440-746, South Korea.
Phys Chem Chem Phys ; 12(7): 1595-9, 2010 Feb 21.
Article en En | MEDLINE | ID: mdl-20126775
ABSTRACT
Different bulk structures of graphite oxide were systematically investigated using density functional theory (DFT). Our model consisted of a hexagonal in-plane structure of graphene with hydroxyl and epoxide groups, and different oxidation levels and water content. The graphitic AB stacking order was stable in anhydrous graphite oxide, independent of oxidation levels. The hydrogen bonding interaction of layers became weaker as the oxidation level increased to the saturation limit. When water molecules were present in highly oxidized graphite oxide, the AB stacking order was broken due to entropic disorder. The interlayer distances increased with the oxidation level the interlayer distance was 5.1 A for low oxidation graphite oxide and 5.8 A for high oxidation graphite oxide. The calculated interlayer distance of hydrated graphite oxide was 7.3 A, which is in excellent agreement with experimental observations.

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2010 Tipo del documento: Article País de afiliación: Corea del Sur

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2010 Tipo del documento: Article País de afiliación: Corea del Sur