Improvement of carrier mobility of top-gated SiC epitaxial graphene transistors using a PVA dielectric buffer layer.
Nanotechnology
; 23(33): 335202, 2012 Aug 24.
Article
en En
| MEDLINE
| ID: mdl-22842470
ABSTRACT
The effects of treatment with polyvinyl alcohol (PVA) and a dielectric film of HfO(2) on the properties of SiC based epitaxial graphene have been explored and analyzed. We have characterized the carrier mobility of graphene on Si-face and C-face SiC with a layer of HfO(2), with or without an initial PVA treatment on the device active layer. Epitaxial graphene grown on the C-face displays a higher mobility than a film grown on the silicon face. Also, the mobility in the presence of the PVA treatment with HfO(2) dielectric layer has been improved, compared with the mobility after deposition of only gate dielectric â¼20% in C-face graphene and â¼90% in Si-face graphene. This is a major improvement over the degradation normally observed with dielectric/graphene systems.
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1
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Año:
2012
Tipo del documento:
Article
País de afiliación:
Estados Unidos