Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip.
Nanotechnology
; 24(11): 115202, 2013 Mar 22.
Article
en En
| MEDLINE
| ID: mdl-23449309
ABSTRACT
An integrated erbium-based light emitting diode has been realized in a waveguide configuration allowing 1.54 µm light signal routing in silicon photonic circuits. This injection device is based on an asymmetric horizontal slot waveguide where the active slot material is Er(3+) in SiO2 or Er(3+) in Si-rich oxide. The active horizontal slot waveguide allows optical confinement, guiding and lateral extraction of the light for on-chip distribution. Light is then coupled through a taper section to a passive Si waveguide terminated by a grating which extracts (or inserts) the light signal for measuring purposes. We measured an optical power density in the range of tens of µW/cm(2) which follows a super-linear dependence on injected current density. When the device is biased at high current density, upon a voltage pulse (pump signal), free-carrier and space charge absorption losses become large, attenuating a probe signal by more than 60 dB/cm and thus behaving conceptually as an electro-optical modulator. The integrated device reported here is the first example, still to be optimized, of a fundamental block to realize an integrated silicon photonic circuit with monolithic integration of the light emitter.
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1
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Año:
2013
Tipo del documento:
Article
País de afiliación:
España