The study on SiO2 pattern fabrication using Ge1.5Sn0.5Sb2Te5 as resists.
J Nanosci Nanotechnol
; 13(2): 829-33, 2013 Feb.
Article
en En
| MEDLINE
| ID: mdl-23646524
ABSTRACT
Ge1.5Sn0.5Sb2Te5 (GSST) can be easily induced to phase transition from amorphous state to crystalline state by a laser direct writing (LDW) system. The results show that the crystalline phase of GSST is more durable against acid solution corrosion than the amorphous phase. So nano-scale patterns and structures can be formed on the GSST film resists using laser-induced phase change and wet etching. Moreover, reactive ion etching (RIE) technology was applied to transfer these patterns onto the SiO2 substrate. The result shows to the extent that GSST material has thermal resist characteristics with high resolution and well etching selectivity to SiO2 when etched in the CHF3, which is compatibility with the future nanofabricate processing.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
J Nanosci Nanotechnol
Año:
2013
Tipo del documento:
Article
País de afiliación:
China