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Mg composition dependent band offsets of Zn(1-x)Mg(x)O/ZnO heterojunctions.
Zhang, H H; Pan, X H; Lu, B; Huang, J Y; Ding, P; Chen, W; He, H P; Lu, J G; Chen, S S; Ye, Z Z.
Afiliación
  • Zhang HH; State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.
Phys Chem Chem Phys ; 15(27): 11231-5, 2013 Jul 21.
Article en En | MEDLINE | ID: mdl-23744185
The valence band offsets (ΔEV) of Zn(1-x)Mg(x)O/ZnO heterojunctions grown by plasma-assisted molecular beam epitaxy were measured by photoelectron spectroscopy. From the directly obtained ΔEV values, the related conduction band offsets (ΔEC) were deduced. All the Zn(1-x)Mg(x)O/ZnO heterojunctions exhibit a type-I band alignment with the ΔEC/ΔEV estimated to be 1.5, 1.8, 2.0 for x = 0.10, 0.15 and 0.20, respectively. The band offsets of Zn(1-x)Mg(x)O/ZnO heterojunctions depend on Mg composition. The accurate determination of energy band alignment of Zn(1-x)Mg(x)O/ZnO is helpful for designing ZnO based optoelectronic devices.

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2013 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Asunto de la revista: BIOFISICA / QUIMICA Año: 2013 Tipo del documento: Article