Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation.
J Nanosci Nanotechnol
; 13(3): 1738-40, 2013 Mar.
Article
en En
| MEDLINE
| ID: mdl-23755582
ABSTRACT
This study examined the effect of electron-beam (E-beam) irradiation on the AIGaN/GaN HEMTs for the reduction of gate leakage. After E-beam irradiation, the gate leakage current significantly decreased from 2.68 x 10(-8) A to 4.69 x 10(-9) A at a drain voltage of 10 V. The maximum drain current density of the AIGaN/GaN HEMTs with E-beam irradiation increased 14%, and the threshold voltage exhibited a negative shift, when compared to that of the AIGaN/GaN HEMTs before E-beam irradiation. These results strongly suggest that the reduction of gate leakage current resulted from neutralization nitrogen vacancies and removing of oxygen impurities.
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01-internacional
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MEDLINE
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En
Revista:
J Nanosci Nanotechnol
Año:
2013
Tipo del documento:
Article