Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory.

Lee, Daeseok; Park, Jaesung; Park, Jaehyuk; Woo, Jiyong; Cha, Euijun; Lee, Sangheon; Moon, Kibong; Song, Jeonghwan; Koo, Yunmo; Hwang, Hyunsang

Lee, Daeseok; Park, Jaesung; Park, Jaehyuk; Woo, Jiyong; Cha, Euijun; Lee, Sangheon; Moon, Kibong; Song, Jeonghwan; Koo, Yunmo; Hwang, Hyunsang.

Afiliación

Lee D; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 790-784, Republic of Korea.

Adv Mater ; 27(1): 59-64, 2015 Jan 07.

Article en En | MEDLINE | ID: mdl-25377127

RESUMEN

A 3D high-density switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize high-density ReRAM applications.

Palabras clave

3D structure; cross-point array; metal-insulator transition; non-volatilememory; titanium oxide; two-terminal switch

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2015 Tipo del documento: Article

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