Generation of Rashba spin-orbit coupling in CdSe nanowire by ionic liquid gate.
Nano Lett
; 15(2): 1152-7, 2015 Feb 11.
Article
en En
| MEDLINE
| ID: mdl-25574856
ABSTRACT
Spintronic devices rely on the spin degree of freedom (DOF), and spin orbit coupling (SOC) is the key to manipulate spin DOF. Quasi-one-dimensional structures, possessing marked anisotropy gives more choice for the manipulation of the spin DOF since the concrete SOC form varies along with crystallographic directions. The anisotropy of the Dresselhaus SOC in cadmium selenide (CdSe) nanobelt and nanowire was studied by circular photogalvanic effect. It was demonstrated that the Dresselhaus SOC parameter is zero along the [0001] crystallographic direction, which suppresses the spin relaxation and increases the spin diffusion length, and thus is beneficial to the spin manipulation. To achieve a device structure with Rashba SOC presence and Dresselhaus SOC absence for manipulating the spin DOF, an ionic liquid gate was produced on a nanowire grown along the [0001] crystallographic direction, and the Rashba SOC was induced by gating, as expected.
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Texto completo:
1
Colección:
01-internacional
Banco de datos:
MEDLINE
Asunto principal:
Compuestos de Selenio
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Compuestos de Cadmio
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Líquidos Iónicos
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Nanocables
Idioma:
En
Revista:
Nano Lett
Año:
2015
Tipo del documento:
Article