X-ray nanodiffraction analysis of stress oscillations in a W thin film on through-silicon via.

Todt, J; Hammer, H; Sartory, B; Burghammer, M; Kraft, J; Daniel, R; Keckes, J; Defregger, S

Todt, J; Hammer, H; Sartory, B; Burghammer, M; Kraft, J; Daniel, R; Keckes, J; Defregger, S.

Afiliación

Todt J; Department of Materials Physics, Montanuniversität Leoben , Leoben, Austria.
Hammer H; Materials Center Leoben Forschung GmbH , Roseggerstrasse 12, Leoben, Austria.
Sartory B; Materials Center Leoben Forschung GmbH , Roseggerstrasse 12, Leoben, Austria.
Burghammer M; European Synchrotron Radiation Facility , 6 Rue Jules Horowitz, Grenoble, France.
Kraft J; ams AG , Unterpremstätten, Austria.
Daniel R; Department of Physical Metallurgy and Materials Testing, Montanuniversität Leoben , Austria.
Keckes J; Department of Materials Physics, Montanuniversität Leoben , Leoben, Austria.
Defregger S; Materials Center Leoben Forschung GmbH , Roseggerstrasse 12, Leoben, Austria.

J Appl Crystallogr ; 49(Pt 1): 182-187, 2016 Feb 01.

Article en En | MEDLINE | ID: mdl-26937239

Palabras clave

X-ray nanodiffraction; residual stress; through-silicon via

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: J Appl Crystallogr Año: 2016 Tipo del documento: Article País de afiliación: Austria

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