Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors.

Yi, Wei; Savel'ev, Sergey E; Medeiros-Ribeiro, Gilberto; Miao, Feng; Zhang, M-X; Yang, J Joshua; Bratkovsky, Alexander M; Williams, R Stanley

Yi, Wei; Savel'ev, Sergey E; Medeiros-Ribeiro, Gilberto; Miao, Feng; Zhang, M-X; Yang, J Joshua; Bratkovsky, Alexander M; Williams, R Stanley.

Afiliación

Yi W; Hewlett-Packard Laboratories, Palo Alto, California 94304, USA.
Savel'ev SE; HRL Laboratories, LLC, Malibu, California 90265, USA.
Medeiros-Ribeiro G; Department of Physics, Loughborough University, Loughborough LE11 3TU, UK.
Miao F; Hewlett-Packard Laboratories, Palo Alto, California 94304, USA.
Zhang MX; Departamento de Física, UFMG, PO Box 702, Belo Horizonte, 30123-970, Brazil.
Yang JJ; Hewlett-Packard Laboratories, Palo Alto, California 94304, USA.
Bratkovsky AM; National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Williams RS; Hewlett-Packard Laboratories, Palo Alto, California 94304, USA.

Nat Commun ; 7: 11142, 2016 Apr 04.

Article en En | MEDLINE | ID: mdl-27041485

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos

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