Origin of the Photoluminescence Quantum Yields Enhanced by Alkane-Termination of Freestanding Silicon Nanocrystals: Temperature-Dependence of Optical Properties.

Ghosh, Batu; Takeguchi, Masaki; Nakamura, Jin; Nemoto, Yoshihiro; Hamaoka, Takumi; Chandra, Sourov; Shirahata, Naoto

Ghosh, Batu; Takeguchi, Masaki; Nakamura, Jin; Nemoto, Yoshihiro; Hamaoka, Takumi; Chandra, Sourov; Shirahata, Naoto.

Afiliación

Ghosh B; International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Takeguchi M; Department of Physics, Triveni Devi Bhalotia College, Raniganj, Burdwan-713347, West Bengal, India.
Nakamura J; Transmission Electron Microscopy Station, NIMS, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan.
Nemoto Y; International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
Hamaoka T; Transmission Electron Microscopy Station, NIMS, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan.
Chandra S; Transmission Electron Microscopy Station, NIMS, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan.
Shirahata N; International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.

Sci Rep ; 6: 36951, 2016 11 10.

Article en En | MEDLINE | ID: mdl-27830771

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2016 Tipo del documento: Article País de afiliación: Japón

Texto completo

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2016 Tipo del documento: Article País de afiliación: Japón