Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts.
Small
; 13(18)2017 05.
Article
en En
| MEDLINE
| ID: mdl-28296162
ABSTRACT
The abundant electronic and optical properties of 2D materials that are just one-atom thick pave the way for many novel electronic applications. One important application is to explore the band-to-band tunneling in the heterojunction built by different 2D materials. Here, a gate-controlled WSe2 transistor is constructed by using different work function metals to form the drain (Pt) and source (Cr) electrodes. The device can be gate-modulated to exhibit three modes of operation, i.e., the tunneling mode with remarkable negative differential resistance, the transition mode with a second electron tunneling phenomenon for backward bias, and finally the conventional diode mode with rectifying characteristics. In contrast to the heterojunctions built by different 2D materials, these devices show significantly enhanced tunneling current by two orders of magnitude, which may largely benefit from the clean interfaces. These results pave the way toward design of novel electronic devices using the modulation of metal work functions.
Texto completo:
1
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Small
Asunto de la revista:
ENGENHARIA BIOMEDICA
Año:
2017
Tipo del documento:
Article
País de afiliación:
China