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Stable and Reversible Lithium Storage with High Pseudocapacitance in GaN Nanowires.
Sun, Changlong; Yang, Mingzhi; Wang, Tailin; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng.
Afiliación
  • Sun C; State Key Lab of Crystal Materials, Shandong University , Jinan 250100, Shandong, P. R. China.
  • Yang M; State Key Lab of Crystal Materials, Shandong University , Jinan 250100, Shandong, P. R. China.
  • Wang T; State Key Lab of Crystal Materials, Shandong University , Jinan 250100, Shandong, P. R. China.
  • Shao Y; State Key Lab of Crystal Materials, Shandong University , Jinan 250100, Shandong, P. R. China.
  • Wu Y; State Key Lab of Crystal Materials, Shandong University , Jinan 250100, Shandong, P. R. China.
  • Hao X; State Key Lab of Crystal Materials, Shandong University , Jinan 250100, Shandong, P. R. China.
ACS Appl Mater Interfaces ; 10(3): 2574-2580, 2018 Jan 24.
Article en En | MEDLINE | ID: mdl-29272098
ABSTRACT
In this work, gallium nitride (GaN) nanowires (NWs) were synthesized by chemical vapor deposition (CVD) process. The hybrid electrode showed the capacity up to 486 mAh g-1 after 400 cycles at 0.1 A g-1. Even at 10 A g-1, the reversible capacity can stabilize at 75 mAh g-1 (after 1000 cycles). Pseudocapacitive capacity was defined by kinetics analysis. The dynamics analysis and electrochemical reaction mechanism of GaN with Li+ was also analyzed by ex situ XRD, HRTEM, and XPS results. These results not only cast new light on pseudocapacitance enhanced high-rate energy storage devices by self-assembled nanoengineering but also extend the application range of traditional binary III/V semiconductors.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2018 Tipo del documento: Article