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Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3-1.55-µm Window.
Golovynskyi, Sergii; Datsenko, Oleksandr I; Seravalli, Luca; Trevisi, Giovanna; Frigeri, Paola; Babichuk, Ivan S; Golovynska, Iuliia; Qu, Junle.
Afiliación
  • Golovynskyi S; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
  • Datsenko OI; Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, 03028, Ukraine.
  • Seravalli L; Department of Physics, Taras Shevchenko National University of Kyiv, Kyiv, 01601, Ukraine.
  • Trevisi G; Institute of Materials for Electronics and Magnetism, CNR-IMEM, I-43124, Parma, Italy.
  • Frigeri P; Institute of Materials for Electronics and Magnetism, CNR-IMEM, I-43124, Parma, Italy.
  • Babichuk IS; Institute of Materials for Electronics and Magnetism, CNR-IMEM, I-43124, Parma, Italy.
  • Golovynska I; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
  • Qu J; Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, 03028, Ukraine.
Nanoscale Res Lett ; 13(1): 103, 2018 Apr 16.
Article en En | MEDLINE | ID: mdl-29663094
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2018 Tipo del documento: Article
Texto completo
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XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanoscale Res Lett Año: 2018 Tipo del documento: Article