Your browser doesn't support javascript.
loading
Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation.
Islam, Abu Bashar Mohammad Hamidul; Shim, Jong-In; Shin, Dong-Soo.
Afiliación
  • Islam ABMH; Department of Electronics and Communication Engineering, Hanyang University ERICA, Ansan 15588, Korea. hamidul@spl.hanyang.ac.kr.
  • Shim JI; Department of Electronics and Communication Engineering, Hanyang University ERICA, Ansan 15588, Korea. jishim@hanyang.ac.kr.
  • Shin DS; Department of Photonics and Nanoelectronics and Department of Bionanotechnology, Hanyang University ERICA, Ansan 15588, Korea. dshin@hanyang.ac.kr.
Materials (Basel) ; 11(5)2018 May 07.
Article en En | MEDLINE | ID: mdl-29735933
Palabras clave
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2018 Tipo del documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Materials (Basel) Año: 2018 Tipo del documento: Article