Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length.

Pitner, Gregory; Hills, Gage; Llinas, Juan Pablo; Persson, Karl-Magnus; Park, Rebecca; Bokor, Jeffrey; Mitra, Subhasish; Wong, H-S Philip

Pitner, Gregory; Hills, Gage; Llinas, Juan Pablo; Persson, Karl-Magnus; Park, Rebecca; Bokor, Jeffrey; Mitra, Subhasish; Wong, H-S Philip.

Afiliación

Llinas JP; Department of Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States.
Bokor J; Department of Electrical Engineering and Computer Sciences , University of California , Berkeley , California 94720 , United States.

Nano Lett ; 19(2): 1083-1089, 2019 02 13.

Article en En | MEDLINE | ID: mdl-30677297

Palabras clave

Carbon nanotube field-effect transistor; beyond Si; contact resistance; scaled transistor; side contact; variations

Texto completo

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2019 Tipo del documento: Article

Texto completo

Imprimir

XML

PubMed Links

Buscar en Google

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2019 Tipo del documento: Article