The evolution of surface cleanness and electronic properties of graphene field-effect transistors during mechanical cleaning with atomic force microscopy.
Nanotechnology
; 30(39): 394003, 2019 Sep 27.
Article
en En
| MEDLINE
| ID: mdl-31242472
ABSTRACT
The evolution of surface cleanliness and the electronic properties-Dirac voltage(V Dirac), hysteresis and mobility (µ) of a graphene field-effect transistor (GFET)-were monitored by measuring lateral force microscopy and drain current (I D) as a function of gate voltage (V G), after mechanically cleaning the surface, scan-by-scan, with contact-mode atomic force microscopy. Both the surface cleanliness and the electronic properties evolved, showing a sudden improvement and then saturation for a mobility of around 2200 cm2 V-1 s-1. We found that the mobility suppression of the as-fabricated GFET deviated from a randomly distributed impurities model, which predicted a greater mobility than obtained from the measured V Dirac. Therefore, the substrate impurities are excluded from the origins of the extraordinary suppression of the mobility, and the possible origin will be discussed.
Texto completo:
1
Colección:
01-internacional
Banco de datos:
MEDLINE
Tipo de estudio:
Prognostic_studies
Idioma:
En
Revista:
Nanotechnology
Año:
2019
Tipo del documento:
Article