Disentangling lattice and electronic contributions to the metal-insulator transition from bulk vs. layer confined RNiO<sub>3</sub>.

Georgescu, Alexandru B; Peil, Oleg E; Disa, Ankit S; Georges, Antoine; Millis, Andrew J

Disentangling lattice and electronic contributions to the metal-insulator transition from bulk vs. layer confined RNiO₃.

Georgescu, Alexandru B; Peil, Oleg E; Disa, Ankit S; Georges, Antoine; Millis, Andrew J.

Afiliación

Georgescu AB; Center for Computational Quantum Physics, Flatiron Institute, New York, NY 10010; ageorgescu@flatironinstitute.org.
Peil OE; Group of Computational Materials Design, Materials Center Leoben, 8700 Leoben, Austria.
Disa AS; Condensed Matter Department, Max Planck Institute for the Structure and Dynamics of Matter, 22761 Hamburg, Germany.
Georges A; Center for Computational Quantum Physics, Flatiron Institute, New York, NY 10010.
Millis AJ; Institut de Physique, Collège de France, 75005 Paris, France.

Proc Natl Acad Sci U S A ; 116(29): 14434-14439, 2019 Jul 16.

Article en En | MEDLINE | ID: mdl-31266888

Palabras clave

epitaxial constraint; heterostructure; layer confinement; metalinsulator transition; transition metal oxide

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Proc Natl Acad Sci U S A Año: 2019 Tipo del documento: Article

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Proc Natl Acad Sci U S A Año: 2019 Tipo del documento: Article