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Pressure-induced phase transitions and superconductivity in a quasi-1-dimensional topological crystalline insulator α-Bi4Br4.
Li, Xiang; Chen, Dongyun; Jin, Meiling; Ma, Dashuai; Ge, Yanfeng; Sun, Jianping; Guo, Wenhan; Sun, Hao; Han, Junfeng; Xiao, Wende; Duan, Junxi; Wang, Qinsheng; Liu, Cheng-Cheng; Zou, Ruqiang; Cheng, Jinguang; Jin, Changqing; Zhou, Jianshi; Goodenough, John B; Zhu, Jinlong; Yao, Yugui.
Afiliación
  • Li X; Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
  • Chen D; Materials Science and Engineering Program, Mechanical Engineering Department, University of Texas at Austin, Austin, TX 78712.
  • Jin M; Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
  • Ma D; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China.
  • Ge Y; Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
  • Sun J; State Key Laboratory of Metastable Materials Science and Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, China.
  • Guo W; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Sun H; Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
  • Han J; Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
  • Xiao W; Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
  • Duan J; Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
  • Wang Q; Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
  • Liu CC; Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
  • Zou R; Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
  • Cheng J; Beijing Key Laboratory for Theory and Technology of Advanced Battery Materials, Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China.
  • Jin C; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Zhou J; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Goodenough JB; Materials Science and Engineering Program, Mechanical Engineering Department, University of Texas at Austin, Austin, TX 78712.
  • Zhu J; Materials Science and Engineering Program, Mechanical Engineering Department, University of Texas at Austin, Austin, TX 78712; jgoodenough@mail.utexas.edu zhujl@sustech.edu.cn ygyao@bit.edu.cn.
  • Yao Y; Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China; jgoodenough@mail.utexas.edu zhujl@sustech.edu.cn ygyao@bit.edu.cn.
Proc Natl Acad Sci U S A ; 116(36): 17696-17700, 2019 Sep 03.
Article en En | MEDLINE | ID: mdl-31420513
Great progress has been achieved in the research field of topological states of matter during the past decade. Recently, a quasi-1-dimensional bismuth bromide, Bi4Br4, has been predicted to be a rotational symmetry-protected topological crystalline insulator; it would also exhibit more exotic topological properties under pressure. Here, we report a thorough study of phase transitions and superconductivity in a quasihydrostatically pressurized α-Bi4Br4 crystal by performing detailed measurements of electrical resistance, alternating current magnetic susceptibility, and in situ high-pressure single-crystal X-ray diffraction together with first principles calculations. We find a pressure-induced insulator-metal transition between ∼3.0 and 3.8 GPa where valence and conduction bands cross the Fermi level to form a set of small pockets of holes and electrons. With further increase of pressure, 2 superconductive transitions emerge. One shows a sharp resistance drop to 0 near 6.8 K at 3.8 GPa; the transition temperature gradually lowers with increasing pressure and completely vanishes above 12.0 GPa. Another transition sets in around 9.0 K at 5.5 GPa and persists up to the highest pressure of 45.0 GPa studied in this work. Intriguingly, we find that the first superconducting phase might coexist with a nontrivial rotational symmetry-protected topology in the pressure range of ∼3.8 to 4.3 GPa; the second one is associated with a structural phase transition from monoclinic C2/m to triclinic P-1 symmetry.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Proc Natl Acad Sci U S A Año: 2019 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Proc Natl Acad Sci U S A Año: 2019 Tipo del documento: Article País de afiliación: China