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High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors.
Makita, Tatsuyuki; Kumagai, Shohei; Kumamoto, Akihito; Mitani, Masato; Tsurumi, Junto; Hakamatani, Ryohei; Sasaki, Mari; Okamoto, Toshihiro; Ikuhara, Yuichi; Watanabe, Shun; Takeya, Jun.
Afiliación
  • Makita T; Material Innovation Research Center (MIRC), Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.
  • Kumagai S; Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.
  • Kumamoto A; AIST-UTokyo Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology (AIST), Kashiwa, Chiba 277-8561, Japan.
  • Mitani M; Material Innovation Research Center (MIRC), Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.
  • Tsurumi J; Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.
  • Hakamatani R; Institute of Engineering Innovation, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan.
  • Sasaki M; Material Innovation Research Center (MIRC), Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.
  • Okamoto T; Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.
  • Ikuhara Y; International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan.
  • Watanabe S; Material Innovation Research Center (MIRC), Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.
  • Takeya J; Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.
Proc Natl Acad Sci U S A ; 117(1): 80-85, 2020 Jan 07.
Article en En | MEDLINE | ID: mdl-31857386
ABSTRACT
Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer-thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12 [Formula see text] The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.
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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Proc Natl Acad Sci U S A Año: 2020 Tipo del documento: Article País de afiliación: Japón

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Proc Natl Acad Sci U S A Año: 2020 Tipo del documento: Article País de afiliación: Japón