Ultrashort Vertical-Channel van der Waals Semiconductor Transistors.
Adv Sci (Weinh)
; 7(4): 1902964, 2020 Feb.
Article
en En
| MEDLINE
| ID: mdl-32099767
ABSTRACT
Atomically thin 2D van der Waals semiconductors are promising candidates for next-generation nanoscale field-effect transistors (FETs). Although large-area 2D van der Waals materials have been successfully synthesized, such nanometer-length-scale devices have not been well demonstrated in 2D van der Waals semiconductors. Here, controllable nanometer-scale transistors with a channel length of ≈10 nm are fabricated via vertical channels by squeezing an ultrathin insulating spacer between the out-of-plane source and drain electrodes, and the feasibility of high-density and large-scale fabrication is demonstrated. A large on-current density of ≈70 µA µm-1 nm-1 at a source-drain voltage of 0.5 V and a high on/off ratio of ≈107-109 are obtained in ultrashort 2D vertical channel FETs with monolayer MoS2 synthesized through chemical vapor deposition. The work provides a promising route toward the complementary metal-oxide-semiconductor-compatible fabrication of wafer-scale 2D van der Waals transistors with high-density integration.
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1
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Adv Sci (Weinh)
Año:
2020
Tipo del documento:
Article