Mobility Enhancement in Graphene by in situ Reduction of Random Strain Fluctuations.
Phys Rev Lett
; 124(15): 157701, 2020 Apr 17.
Article
en En
| MEDLINE
| ID: mdl-32357042
ABSTRACT
Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present transport measurements in hBN-encapsulated devices where such strain fluctuations can be in situ reduced by increasing the average uniaxial strain. When â¼0.2% of uniaxial strain is applied to the graphene, an enhancement of the carrier mobility by â¼35% is observed while the residual doping reduces by â¼39%. We demonstrate a strong correlation between the mobility and the residual doping, from which we conclude that random local strain fluctuations are the dominant source of disorder limiting the mobility in these devices. Our findings are also supported by Raman spectroscopy measurements.
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Colección:
01-internacional
Banco de datos:
MEDLINE
Tipo de estudio:
Clinical_trials
Idioma:
En
Revista:
Phys Rev Lett
Año:
2020
Tipo del documento:
Article
País de afiliación:
Suiza